Enhanced Photoluminescence Intensity of Silicon–Germanium Nanoparticles: Silica Thin Films by Annealing in Forming Gas

Abstract

Silicon-germanium nanoparticles are prepared by ion implantation and annealing method. Further annealing treatment is carried out in forming gas to passivate nonradiative defects around nanoparticles. Time-resolved photoluminescence measurements were examined to reveal the local environment surrounding the nanoparticles. With the increase in oxygen gas content, photoluminescence intensity from specimen is enhanced by $5 times and its decay time s decreases from 23.2 to 1.6 ms. Oxygen gas is considered to be an effective passivating gas for this kind of specimen.