Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission

Kim, Yeon-Hwa; Chu, Rafael Jumar; Ryu, Guen-Hwan; Woo, Seungwan; Lung, Quang Nhat Dang; Ahn, Dae‐Hwan; Han, Jae‐Hoon; Choi, Won Jun; Jung, Daehwan

doi:10.1021/acsami.2c14492

Cited by 9 publications

(8 citation statements)

References 27 publications

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“…Electron channeling contrast images of (a) 3000 nm GaAs buffer, (b) 1500 nm GaAs buffer, and (c) 700 nm GaAs buffer on Si. (d) Recent TDD results of different research groups. ,− …”

Section: Resultsmentioning

confidence: 99%

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Laryn,

Chu,

Kim

et al. 2024

ACS Appl. Mater. Interfaces

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Monolithic integration of III–V quantum dot (QD) lasers onto a Si substrate is a scalable and reliable approach for obtaining highly efficient light sources for Si photonics. Recently, a combination of optimized GaAs buffers and QD gain materials resulted in monolithically integrated butt-coupled lasers on Si. However, the use of thick GaAs buffers up to 3 μm not only hinders accurate vertical alignment to the Si optical waveguide but also imposes considerable growth costs and time constraints. Here, for the first time, we demonstrate InAs QD lasers epitaxially grown on a 700 nm thick GaAs/Si template, which is approximately four times thinner than the conventional III–V buffers on Si. The optimized 700 nm GaAs buffer yields a remarkably smooth surface and low threading dislocation density of 4 × 108 cm–2, which is sufficient for QD laser growth. The InAs QD lasers fabricated on these ultrathin templates still lase at room temperature with a threshold current density of 661 A/cm2 and a characteristic temperature of 50 K. We believe that these results are important for the monolithically integrated III–V QD lasers for Si photonics applications.

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“…Electron channeling contrast images of (a) 3000 nm GaAs buffer, (b) 1500 nm GaAs buffer, and (c) 700 nm GaAs buffer on Si. (d) Recent TDD results of different research groups. ,− …”

Section: Resultsmentioning

confidence: 99%

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Laryn,

Chu,

Kim

et al. 2024

ACS Appl. Mater. Interfaces

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“…There have been a few studies on InP-based lasers emitting at 2 μm and beyond, but these low-bandgap QW lasers suffer from low gain and high-temperature sensitivity, limiting their practical use [ 9 , 10 ]. At the shorter O-band (1.3 μm), InAs quantum dots (QDs) grown on GaAs are established to be superior quantum emitters compared to their bulk and QW counterparts due to their 3D carrier confinement, Dirac delta-like density of states, and dislocation tolerance [ 11 , 12 ]. Quantum emitters at 2 μm would benefit greatly from the advantages of zero-dimensionality, but 2 μm is beyond the reach of the conventional InAs QDs on GaAs system.…”

Section: Introductionmentioning

confidence: 99%

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

et al. 2023

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InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.

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“…Despite significant strides in the improvement of device performance, challenges still remain in the growth of high-quality metamorphic GaSb buffer layers on Si, which ultimately determines the device quality. Typical growth of III–V materials on Si involves mismatches in lattice constants, polarities, and thermal expansion coefficients, which lead to generations of threading dislocations (TDs), antiphase boundaries (APBs), and thermal cracks in the III–V layers, respectively. − First, the thermal cracking issue can mostly be avoided by constraining the total epitaxial III–V layer thickness below ∼5 μm. , Second, threading dislocation density (TDD) can be reduced by various defect filter layers (DFLs) such as the AlSb single insertion layer (SIL) and strained layer superlattices (SLSs). , Finally, APBs can be suppressed by using 4–6° off-cut Si wafers, but this approach is not desirable in the long term because such off-cut Si wafers are not compatible with standard Si photonics platforms, which require nominally on-axis (001) Si …”

Section: Introductionmentioning

confidence: 99%

Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes

Yeon,

Woo,

Chu

et al. 2023

ACS Appl. Mater. Interfaces

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Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach for achieving a low-cost, compact, and scalable infrared photonics platform. While tremendous efforts have been put into reducing dislocation densities by using various defect filter layers, exploring other types of extended crystal defects that can exist on GaSb/Si buffers has largely been neglected. Here, we show that GaSb growth on Si generates a high density of micro-twin (MT) defects as well as threading dislocations (TDs) to accommodate the extremely large misfit between GaSb and Si. We found that a 250 nm AlSb single insertion layer is more effective than AlSb/GaSb strained superlattices in reducing both types of defects, resulting in a 4× and 13× reduction in TD density and MT density, respectively, compared with a reference sample with no defect filter layer. InGaSb quantum well light-emitting diodes were grown on the GaSb/Si templates, and the effect of TD density and MT density on their performance was studied. This work shows the importance of using appropriate defect filter layers for high performance GaSb-based optoelectronic devices on standard on-axis (001) Si via direct epitaxial growth.

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Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission

Cited by 9 publications

References 27 publications

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes

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