Enhanced Photoluminescence of Gd3Al4GaO12: Cr3+ by Energy Transfers from Co-Doped Dy3+

Abstract

LEDs for plant lighting have attracted wide attention and phosphors with good stability and deep-red emission are urgently needed. Novel Cr3+ and Dy3+ co-doped Gd3Al4GaO12 garnet (GAGG) phosphors were successfully prepared through a conventional solid-state reaction. Using blue LEDs, a broadband deep-red emission at 650–850 nm was obtained due to the Cr3+ 4T2 → 4A2 transition. When the Cr3+ concentration was fixed to 0.1 mol, the crystal structure did not change with an increase in the Dy3+ doping concentration. The luminous intensity of the optimized GAGG:0.1Cr3+, 0.01Dy3+ was 1.4 times that of the single-doped GAGG:0.1Cr3+. Due to the energy transfer from Dy3+ to Cr3+, the internal quantum efficiency reached 86.7%. The energy transfer from Dy3+ to Cr3+ can be demonstrated through luminescence spectra and fluorescence decay. The excellent properties of the synthesized phosphor indicate promising applications in the agricultural industry.

Enhancing Infrared Photoluminescence Performance via Li+ Substitution and Yb3+ Codoping in Na3ScSi3O9:Cr3+ Phosphor

“…As an indispensable component in phosphor-converted infrared LEDs, infraredemitting phosphors play a crucial role in determining the overall luminescence performance of the final infrared LED devices [10]. In recent years, Cr 3+ -activated broadband inorganic phosphor materials have attracted extensive attention in view of their superior infrared luminescence performance, including strong blue light absorption capability and tunable broadband emission in a weak octahedral crystal field [11][12][13][14][15][16][17]. Among them, Cr 3+ -doped silicate-based broadband infrared phosphors usually show good physicochemical stability, low cost, and high luminescence efficiency [18][19][20], which enables them to be desirable light conversion materials for phosphor-converted infrared LEDs.…”