Enhanced photoresponse of annealed ZnO nanoparticle film near its bandgap

Jafari, Saeed; Ebrahimpour, Zeinab

doi:10.1007/s00339-023-07139-2

Cited by 2 publications

(1 citation statement)

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“…2 d showed that the optical bandgap ( E g ) of as-grown and annealed A-ZnO microtubes to be 3.14 eV and 3.13 eV, respectively. This indicated that more photogenerated electron–hole pairs will be generated with narrowing E g for the annealed A-ZnO microtubes [ 23 ], which benefits the realization of optoelectrical synaptic behaviors.…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on the optoelectrical synapse behaviors of A-ZnO microtube

Pan,

Wang,

et al. 2024

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Optoelectronic synapses with fast response, low power consumption, and memory function hold great potential in the future of artificial intelligence technologies. Herein, a strategy of annealing in oxygen ambient at different temperatures is presented to improve the optoelectronic synaptic behaviors of acceptor-rich ZnO (A-ZnO) microtubes. The basic synaptic functions of as-grown and annealed A-ZnO microtubes including excitatory postsynaptic current (EPSC), short-term memory (STM) to long-term memory (LTM) conversion, and paired-pulse facilitation (PPF), were successfully emulated. The results show that the annealing temperature of 600 °C yields high figures of merit compared to other annealed A-ZnO microtubes. The 4-fold and 20-fold enhancement dependent on the light pulse duration time and energy density have been achieved in the 600 °C annealed A-ZnO microtube, respectively. Furthermore, the device exhibited a PPF index of up to 238% and achieved four cycles of “learning-forgetting” process, proving its capability for optical information storage. The free exciton (FX) and donor–acceptor pair (DAP) concentrations significantly influenced the persistent photoconductivity (PPC) behavior of A-ZnO microtubes. Therefore, the LTM response can be controlled by the adjustment of numbers, powers, and interval time of the optical stimulation. This work outlines a strategy to improve the EPSC response through defect control, representing a step towards applications in the field of optoelectronic synaptic device.

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Section: Resultsmentioning

confidence: 99%