Enhanced photoresponse of Cu2O/ZnO heterojunction with piezo-modulated interface engineering

Lin, Pei; Chen, Xiang; Yan, Xiaoqin; Zhang, Zheng; Yuan, Haoge; Li, Peifeng; Zhao, Yanguang

doi:10.1007/s12274-014-0447-6

Cited by 93 publications

(43 citation statements)

References 31 publications

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“…[25][26][27][28][29][30] This responsivity value corresponds to an external quantum efficiency (EQE) of about 65% if the internal photoconductive gain is assumed to be one. 31 The high responsivity achieved in the ZnO/ZnS core/shell nanowire array device can mainly be attributed to the abrupt nature of the interface between ZnO and ZnS, which effectively inhibits carrier recombination and facilitates an efficient carrier separation.…”

Section: Resultsmentioning

confidence: 99%

“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 The responsivity for UV (385 nm) excitation source, denoted as R 385nm, with a 0.04 mW/cm 2 illumination density was found to be 0.2 A/W, which is similar to a single crystal ZnS nanobelt UV sensor, 24 and is orders of magnitude higher than similar photodetectors fabricated with a 3D array of nanowires. [25][26][27][28][29][30] This responsivity value corresponds to an external quantum efficiency (EQE) of about 65% if the internal photoconductive gain is assumed to be one. 31 The high responsivity achieved in the ZnO/ZnS core/shell nanowire array device can mainly be attributed to the abrupt nature of the interface between ZnO and ZnS, which effectively inhibits carrier recombination and facilitates an efficient carrier separation.…”

Section: Resultsmentioning

confidence: 99%

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Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

et al. 2015

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A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

et al. 2015

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“…It refers to the use of strain‐induced piezoelectric‐polarization to regulate the generation, transport, separation, and/or the recombination process of photoexcited carriers at Schottky or p–n junction interface for optoelectronics performance modulation . This effect has been successfully demonstrated in wurtzite ZnO and GaN optoelectronics such as light‐emitting diode, solar cells, and photosensors . Precise tunability over junction property is critical to the operation of functional vdWs electronics/optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Piezo‐Phototronic Effect for Enhanced Flexible MoS₂/WSe₂ van der Waals Photodiodes

Lin

Zhu

et al. 2018

Adv Funct Materials

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153

116

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The recent discoveries of transition-metal dichalcogenides (TMDs) as novel 2D electronic materials hold great promise to a rich variety of artificial van der Waals (vdWs) heterojunctions and superlattices. Moreover, most of the monolayer TMDs become intrinsically piezoelectric due to the lack of structural centrosymmetry, which offers them a new degree of freedom to interact with external mechanical stimuli. Here, fabrication of flexible vdWs p-n diode by vertically stacking monolayer n-MoS 2 and a few-layer p-WSe 2 is achieved. Electrical measurement of the junction reveals excellent current rectification behavior with an ideality factor of 1.68 and photovoltaic response is realized. Performance modulation of the photodiode via piezo-phototronic effect is also demonstrated. The optimized photoresponsivity increases by 86% when introducing a −0.62% compressive strain along MoS 2 armchair direction, which originates from realigned energy-band profile at MoS 2 /WSe 2 interface under strain-induced piezoelectric polarization charges. This new coupling mode among piezoelectricity, semiconducting, and optical properties in 2D materials provides a new route to strain-tunable vdWs heterojunctions and may enable the development of novel ultrathin optoelectronics.

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“…Zinc oxide (ZnO) is also a widely investigated wide bandgap semiconductor for solar water splitting. 17,18 Fabrication of n-ZnO/p-Cu 2 O wide/narrow bandgaps hetero-junction can expand the absorption of large part of the solar light spectrum 4,19 and, importantly, suppress the recombination of carriers. 4 Plasmon enhancement of photocatalytic properties of semiconductors by metal nanostructure is also a useful way to increase the efficiency of PEC cells.…”

mentioning

confidence: 99%

Efficient enhancement of hydrogen production by Ag/Cu2O/ZnO tandem triple-junction photoelectrochemical cell

Liu

Ren

Shen

et al. 2015

Applied Physics Letters

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Highly efficient semiconductor photoelectrodes for solar hydrogen production through photocatalytic water splitting are a promising and challenge solution to solve the energy problems. In this work, Ag/Cu2O/ZnO tandem triple-junction photoelectrode was designed and prepared. An increase of 11 times of photocurrent is achieved in the Ag/Cu2O/ZnO photoelectrode comparing to that of the Cu2O film. The high performance of the Ag/Cu2O/ZnO film is due to the optimized design of the tandem triple-junction structure, where the localized surface Plasmon resonance of Ag and the hetero-junctions efficiently absorb solar energy, produce, and separate electron-hole pairs in the photocathode.

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Enhanced photoresponse of Cu2O/ZnO heterojunction with piezo-modulated interface engineering

Cited by 93 publications

References 31 publications

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Piezo‐Phototronic Effect for Enhanced Flexible MoS₂/WSe₂ van der Waals Photodiodes

Efficient enhancement of hydrogen production by Ag/Cu2O/ZnO tandem triple-junction photoelectrochemical cell

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Enhanced photoresponse of Cu2O/ZnO heterojunction with piezo-modulated interface engineering

Cited by 93 publications

References 31 publications

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

Piezo‐Phototronic Effect for Enhanced Flexible MoS2/WSe2 van der Waals Photodiodes

Efficient enhancement of hydrogen production by Ag/Cu2O/ZnO tandem triple-junction photoelectrochemical cell

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Piezo‐Phototronic Effect for Enhanced Flexible MoS₂/WSe₂ van der Waals Photodiodes