Enhanced Photoresponse of WS₂ Photodetectors through Interfacial Defect Engineering Using a TiO₂ Interlayer

Abstract

Enhanced photo-response of WS2 photodetectors through interfacial defect engineering using TiO2 interlayer. ACS Applied Electronic Materials.

Direct Growth of Graphene Nanowalls on Silicon Using Plasma-Enhanced Atomic Layer Deposition for High-Performance Si-Based Infrared Photodetectors

“…Figure d,e shows the atomic force microscopy (AFM) images of the nucleation and final stages of the grown graphene materials (the nucleation and final growth cycles of PEALD are 50 and 700 cycles, respectively), and the maximum surface fluctuation is around 3.5 and 12.9 nm, respectively. Besides, it has been reported in the literature that ALD technology is beneficial to interface passivation Figure f shows the Si 2p core-level X-ray photoelectron spectroscopy (XPS) spectrum of the PEALD grown graphene material, where the wide peak around 103.0 eV is assigned to the Si–O bonding due to the introduction of formic acid (see Figure S4).…”

“…Besides, it has been reported in the literature that ALD technology is beneficial to interface passivation. 54 Figure 3f shows the Si 2p core-level X-ray photoelectron spectroscopy (XPS) spectrum of the PEALD grown graphene material, where the wide peak around 103.0 eV is assigned to the Si−O bonding due to the introduction of formic acid (see Figure S4). The Fermi-level of Si is usually pinned by surface states existing at the interface, resulting in a built-in field with limited intensity.…”

2D WS2: From Vapor Phase Synthesis to Device Applications

“…[ 176,177 ] With the aim to minimize this adverse effect, an ultrathin dielectric interfacial layer is inserted between metals and 2D semiconductors. [ 178–182 ] Park et al. used ALD TiO 2 as the interfacial layer (Figure 23h) and observed that a low SBH could be obtained after the introduction of this interfacial layer due to Fermi level depinning.…”

Review of First-Principles Studies of TiO2: Nanocluster, Bulk, and Material Interface

“…For convenience, a brief summary of these materials interfaces and their critical materials properties are listed in Table 3. However, it is worth mentioning that, in addition to the material interfaces discussed above, there exist many other types of TiO 2 -based materials interfaces such as TiO 2 /SnO 2 [201], TiO 2 /WS 2 [202], TiO 2 /WSe 2 [203], TiO 2 /Mo 2 [204], TiO 2 /ZnS [205], TiO 2 /g-C 3 N 4 [206], TiO 2 /MnO x [207], TiO 2 /Mo 3 [208], TiO 2 /C60 [209], and TiO 2 -based plasmonic composite [210]. The central idea of these heterostructures is to enhance the charge separation rate of the photoinduced electron-hole pairs via the interfacial charge transfer mechanism, which generally requires the appropriate band alignment.…”