Enhanced photoresponsivity of the MoS2-GaN heterojunction diode via the piezo-phototronic effect

Abstract

Combining layered MoS 2 flakes with conventional 3D semiconductors is a feasible route to fabricate high-quality heterojunction devices by harnessing the advantages of both materials. Here, we present a pressure-modulated heterojunction photodiode that is composed of an n-type multilayer MoS 2 and a p-type GaN film via the piezo-phototronic effect. Under the illumination of 365 nm incident light, a strong photoresponse is observed with response and recovery times of~66 and 74 ms, respectively. Under a pressure of 258 MPa, the photoresponsivity of this photodiode can be tuned by the piezo-phototronic effect arising from the GaN film to~3.5 times. Because of the lowered junction barrier with an applied external pressure (strain), more photogenerated carriers can successfully pass through the junction area without recombination, which results in an enhancement effect. This work provides a possible path for the implementation of high-performance electronic and optoelectronic devices that are based on hybrid heterostructures via human interfacing.

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

“…Our results demonstrate a saturation in the photocurrent switching with increasing light power to 20–30 mW. As previously reported, the photocurrent across a device is closely dependent on its current injection: a large current injection gives rise to a large photocurrent. Thus, we ascribe the photocurrent switchability to the current (resistance) switching shown in Figure b, whose origin is the ferroelectricity of α‐In 2 Se 3 .…”

Progress in piezotronic and piezo-phototronic effect of 2D materials

“…2D materials offer a new choice for achieving desired construction of heterostructures, which not only comprise a large family of these materials vertical stack covering a rather broad range of properties [99][100][101][102], but also assemble 1D-2D or 3D-2D heterojunctions by harnessing the merits of both materials such as MoS 2 -carbon nanotubes and MoS 2 -GaN films [103][104][105][106]. A plethora of opportunities will appear when we apply piezotronic and piezo-phototronic effect in the heterostrctures to creat modern electronics and optoelectronics.…”

Piezotronics and piezo-phototronics with third-generation semiconductors

“…51 Significant advances have also been achieved in studying piezoelectricity and the piezotronic effect in various 2D materials. [52][53][54][55][56][57][58][59][60][61] The study of piezoelectricity and piezotronic effects in 2D materials is an emerging field. In their article in this issue, Liu et al summarize the progress made in related fields.…”