Enhanced piezoelectric and electric field induced stain response in Bi0.5Na0.5TiO3–Ba(Zr0.055Ti0.945)O3 ceramics modified by (K0.5Na0.5)NbO3

Dong, Shasha; Guo, Feifei; Wei, Long; Li, Xiaojuan; Fang, P. H.; Dai, Zhonghua; Xi, Zengzhe

doi:10.1007/s10854-020-03957-9

Cited by 3 publications

(1 citation statement)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is difficult to make transparent ceramics by ordinary sintering methods. The sintering process of KNN ceramic is relatively harsh, resulting in low energy storage characteristics of ceramics. − To improve this situation and enhance the energy storage density ( W ), the breakdown electric field ( E b ) of ceramics should be increased as much as possible and the remanent polarization strength ( P r ) should be reduced. − Recent studies have pointed out that the transparency of ceramic is related to the grain size and pore defects of samples, and grain size ( G ) is considered to play a leading role. − In general, the relationship between E b and G can be expressed as , E normalb ∝ 1 G …”

Section: Introductionmentioning

confidence: 99%

Design of a KNN-BZT Ceramic with High Energy Storage Properties and Transmittance under Low Electric Fields

et al. 2023

Self Cite

View full text Add to dashboard Cite

With the advancement of science and technology, single-function ceramics have been difficult to meet the rapid development of electronic components. It is of great significance to find and develop multifunctional ceramics with excellent performance and environmental friendliness (such as good energy storage and transparency). Especially, the realization of its excellent performance under low electric fields has more reference and practical value. In this study, by Bi(Zn 0.5 Ti 0.5 )O 3 (BZT) modification in (K 0.5 Na 0.5 )NbO 3 (KNN), reducing grain size, and increasing band gap energy, the purpose of improving energy storage performance and transparency has been achieved under low electric field. The results show that the submicron average grain size decreased to 0.9 μm and the band gap energy (E g ) increased to 2.97 eV for 0.90KNN-0.10BZT ceramics. The transparency is up to 69.27% in the near-infrared region (1344 nm) and the energy storage density is 2.16 J/cm 3 under 170 kV/cm. Moreover, the 0.90KNN-0.10BZT ceramic exhibits a power density (P D ) of 17.50 MW/cm 3 and the stored energy can be discharged in 1.60 μs at 140 kV/cm. This revealed a potential application of KNN-BZT ceramic as an energy storage and transparent capacitor in the electronics industry.

show abstract

Section: Introductionmentioning

confidence: 99%

Design of a KNN-BZT Ceramic with High Energy Storage Properties and Transmittance under Low Electric Fields

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

SnO2 modified PNN-PZT ceramics with ultra-high piezoelectric and dielectric properties

Guo

Zhang

Wei

et al. 2022

Ceramics International

View full text Add to dashboard Cite

Preparation and Properties of Nb5+-Doped BCZT-Based Ceramic Thick Films by Scraping Process

Zou,

Fang,

et al. 2024

Materials

View full text Add to dashboard Cite

A bottleneck characterized by high strain and low hysteresis has constantly existed in the design process of piezoelectric actuators. In order to solve the problem that actuator materials cannot simultaneously exhibit large strain and low hysteresis under relatively high electric fields, Nb5+-doped 0.975(Ba0.85Ca0.15)[(Zr0.1Ti0.9)0.999Nb0.001]O3-0.025(Bi0.5Na0.5)ZrO3 (BCZTNb0.001-0.025BiNZ) ceramic thick films were prepared by a film scraping process combined with a solid-state twin crystal method, and the influence of sintering temperature was studied systematically. All BCZTNb0.001-0.025BiNZ ceramic thick films sintered at different sintering temperatures have a pure perovskite structure with multiphase coexistence, dense microstructure and typical dielectric relaxation behavior. The conduction mechanism of all samples at high temperatures is dominated by oxygen vacancies confirmed by linear fitting using the Arrhenius law. As the sintering temperature elevates, the grain size increases, inducing the improvement of dielectric, ferroelectric and field-induced strain performance. The 1325 °C sintered BCZTNb0.001-0.025BiNZ ceramic thick film has the lowest hysteresis (1.34%) and relatively large unipolar strain (0.104%) at 60 kV/cm, showing relatively large strain and nearly zero strain hysteresis compared with most previously reported lead-free piezoelectric ceramics and presenting favorable application prospects in the actuator field.

show abstract

Enhanced piezoelectric and electric field induced stain response in Bi0.5Na0.5TiO3–Ba(Zr0.055Ti0.945)O3 ceramics modified by (K0.5Na0.5)NbO3

Cited by 3 publications

References 35 publications

Design of a KNN-BZT Ceramic with High Energy Storage Properties and Transmittance under Low Electric Fields

Design of a KNN-BZT Ceramic with High Energy Storage Properties and Transmittance under Low Electric Fields

SnO2 modified PNN-PZT ceramics with ultra-high piezoelectric and dielectric properties

Preparation and Properties of Nb5+-Doped BCZT-Based Ceramic Thick Films by Scraping Process

Contact Info

Product

Resources

About