Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Zhu, Li-Yuan; Yang, Jian-Guo; Yuan, Kaiping; Chen, Liqun; Wang, Tao; Ma, Hong-Ping; Huang, Wei; Lu, Hong-Liang; Zhang, David Wei

doi:10.1063/1.5057889

Cited by 13 publications

(5 citation statements)

References 23 publications

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“…Furthermore, while the piezoelectric output of (thermal) ALD ZnO layers has been investigated, no d 33 coefficients have been reported in these studies. [ 27,28 ]…”

Section: Resultsmentioning

confidence: 99%

“…While piezoelectric characterization has been reported for ZnO films grown by different techniques, the literature on piezoelectric properties of ZnO films prepared by ALD is very limited. [ 27,28 ] Nevertheless, ZnO deposited by ALD and especially PE‐ALD has shown ideal properties for piezoelectric applications such as polycrystallinity with (002) texture, [ 18,29,30 ] high resistivity, [ 18,29 ] and a low amount of impurities. [ 17,29,31,32 ] Furthermore, the high reactivity of the plasma coreactant allows for the deposition on thermosensitive substrates at substrate temperatures as low as room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition

Ali

Pilz

Schäffner

et al. 2020

Physica Status Solidi (a)

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Zinc oxide (ZnO) thin films are deposited by plasma‐enhanced atomic layer deposition (PE‐ALD). This deposition method allows depositing stoichiometric and highly resistive ZnO films at room temperature. Despite such important requirements for piezoelectricity being met, not much is known in literature about the piezoelectric properties of ZnO thin films (<70 nm) deposited by PE‐ALD. The films are grown at different substrate temperatures to investigate the effect on crystalline and piezoelectric properties. Films deposited on flexible poly(ethylene terephthalate) (PET) generated a higher piezoelectric current (>1.8 nA) and charge (>80 pC) compared with films deposited on glass (>0.3 nA and >30 pC) due to bending effects of the substrate when mechanically excited. Furthermore, increasing the substrate temperature, during deposition, enhances the growth along the (002) crystallographic orientation, which further strengthens the generated piezoelectric current signal for mechanical excitations along the ZnO film's c‐axis.

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“…Furthermore, while the piezoelectric output of (thermal) ALD ZnO layers has been investigated, no d 33 coefficients have been reported in these studies. [ 27,28 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition

Ali

Pilz

Schäffner

et al. 2020

Physica Status Solidi (a)

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“…Several combinations of piezoelectric and magnetostrictive materials and their ME voltage coupling coefficient have been studied [21][22][23]. Aluminum nitride (AlN) proved to be a potential candidate in ME devices due to its superior piezoelectric properties and large ME coupling with ferromagnetic material [21,24]. Also, AlN has attracted much interest in ReRAM devices due to its low voltage/current operation, prevention of surface contamination and compatibility with CMOS technology [25,26].…”

Section: Introductionmentioning

confidence: 99%

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Kumar

Kaur

2021

Nanotechnology

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This report explores the influence of temperature on resistive switching characteristics in the AlN/Ni-Mn-In magnetoelectric (ME) heterostructure-based resistive random access memory (ReRAM) device. The fabricated Cu/AlN/Ni-Mn-In/Si device exhibits a sharp transition from a high resistance state (HRS) to low resistance state (LRS) at a SET voltage. The rupture of the filament from its weakest point at a RESET voltage turn the device back to its HRS. The stable bipolar resistive switching behavior is described by the current-voltage (I-V ) characteristic. The HRS and LRS are explained by the trap-controlled space charge limited conduction mechanism and a well-known Ohmic conduction mechanism, respectively. The temperature-dependent resistance has been observed to further confirm the conduction mechanism in HRS and LRS. The current conduction in LRS is explained by an analytical model based on copper metallic filament formation via Cu + migration from the top to the bottom electrode. A significant change in the SET voltage has been observed with the decrease in temperature. This variation in the SET voltage is explained via strain-mediated coupling in interfacially connected AlN/Ni-Mn-In ME heterostructure. The fabricated device displays an appreciable OFF/ON ratio of the order ∼3×10 3 with good endurance and retention of ∼1000 cycles and ∼900 s, respectively. A slight variation (<40%) in SET and RESET voltages has been observed for total endurance cycles. This study demonstrates the importance of ME heterostructure for futuristic tuneable ReRAM applications.

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“…This is reasonable, as the nitride film is very thin (600 nm thick), hence it does not affect the beam mass and the effective resonance frequency in a remarkable way. However, the addition of the nitride layer increases the harvested output voltage of all samples, as shown in Figure 8(b), where the two cases are compared 30 . Figure 8(c) shows the fabricated cantilever mounted on PCB 2007E shaker for functional tests.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and characterization of UV‐curable nanocellulose/ZnO/AlN acrylic flexible films: Thermal, dynamic mechanical and piezoelectric response

Signore

Pascali

Duraccio

et al. 2020

J of Applied Polymer Sci

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This work is aimed at fabricating nanocomposites based on zinc oxide (ZnO) nanostructures and nanocellulose dispersed in a UV-cured acrylic matrix (EC) for application as functional coatings for self-powered applications. Morphological, thermal, and dynamic mechanical properties of the nanocomposites were characterized by X-Ray diffractometry (XRD), scanning electron microscopy, and differential scanning calorimetry. The piezoelectric behavior was evaluated in terms of root mean square (RMS) open circuit voltage, at different accelerations applied to cantilever beams. The generated voltage was correlated with ZnO nanostructures morphology, aluminum nitride film integration on the beam and proof mass insertion at the tip. Nitride layer increased the RMS voltage from 1 to 2.4 mV up to 3.9 mV (using ZnO nanoflowers). As confirmed by XRD analyses, the incorporation of ZnO nanostructures into the acrylic matrix favored an ordered structural arrangement of the deposited AlN layer, hence improving the piezoelectric response of the resulting nanocomposites. With proof mass insertion, the output voltage was further increased, reaching 4.5 mV for the AlN-coated system containing ZnO nanoflowers.

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Enhanced piezoelectric performance of the ZnO/AlN stacked nanofilm nanogenerator grown by atomic layer deposition

Cited by 13 publications

References 23 publications

Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition

Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition

Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure

Synthesis and characterization of UV‐curable nanocellulose/ZnO/AlN acrylic flexible films: Thermal, dynamic mechanical and piezoelectric response

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