Enhanced piezoelectric properties of lead-free 0.935(Bi0.5Na0.5)TiO3-0.065BaTiO3 thin films fabricated by using pulsed laser deposition

Probing the dielectric, piezoelectric and magnetic behavior of CoFe2O4/BNT-BT0.08 composite thin film fabricated by sol-gel and spin-coating methods

“…Cobalt ferrite was chosen because is an important component for multiferroic heterostructure thin films or composites due to its high coercivity, moderate magnetization and highest magnetostriction coefficient 20 . (Bi 0.5 Na 0.5 )TiO 3 (BNT) doped with BaTiO 3 (BT) is selected as ferroelectric layer because BNT-BT 0.08 is considered a good candidate to replace the lead-based piezoelectric materials 21,22 . It has been shown previously that the (1-x)BNT-xBT (BNT-BT x ) solid solution has in the compositional domain x = 0.06–0.10 a nearly morphotropic phase boundary (MPB) 23,24 where rhombohedral Bi 0.5 Na 0.5 TiO 3 and tetragonal BaTiO 3 phases coexist.…”

Preparation and piezoelectric properties of self-polarized (Na,Bi)TiO3–BaTiO3thin films on Si substrate

“…There have been many studies on the preparation of NBT-based thin films including NBT-BT on Si; nevertheless, piezoelectricity sufficient for actual applications has not been realized. [13][14][15][16][17][18][19] We presume that one of the reasons for this is the lack of crystal orientation. Moreover, most of the thin films on Si have been prepared by chemical solution deposition 15,16,19) and pulsed laser deposition, 13,18) whereas only a few films deposited by a sputtering have been reported.…”

“…[13][14][15][16][17][18][19] We presume that one of the reasons for this is the lack of crystal orientation. Moreover, most of the thin films on Si have been prepared by chemical solution deposition 15,16,19) and pulsed laser deposition, 13,18) whereas only a few films deposited by a sputtering have been reported. 17) Therefore, the characteristics of sputtered NBT-BT thin films on Si are not clear.…”