Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity

Calahorra, Yonatan; Spiridon, Bogdan F.; Wineman, Adina; Busolo, Tommaso; Griffin, Peter; Szewczyk, Piotr K.; Zhu, Tongtong; Jing, Qingshen; Oliver, Rachel A.; Kar‐Narayan, Sohini

doi:10.1016/j.apmt.2020.100858

Cited by 13 publications

(9 citation statements)

References 54 publications

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“…For example, the use of porosity to control polarization and manage stress in thin-films of polar semiconductors such as GaN. 176 Overall, this review has summarized the significant progress in porous ferroelectric materials for energy technologies in the last few years, which is expected to serve as a useful guideline for future researches in this field. We are expecting to see more and more inspirational developments in porous ferroelectric materials in the future.…”

Section: Conclusion and Prospectivementioning

confidence: 99%

Porous ferroelectric materials for energy technologies: current status and future perspectives

Yan

Xiao

et al. 2021

Energy Environ. Sci.

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Section: Conclusion and Prospectivementioning

confidence: 99%

Porous ferroelectric materials for energy technologies: current status and future perspectives

Yan

Xiao

et al. 2021

Energy Environ. Sci.

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“…On the one hand, strong piezoelectric damping is expected in doped NWs because of the screening of the electric polarization by free charge carriers [18]. On the other hand, this screening can be effectively counteracted in nanostructures with a large surface to volume ratio such as nanoporous films [19][20][21] and NWs [22,23] by the surface Fermi-level pinning mechanism resulting from large densities of surface traps [24]. The interplay between the geometry and the semiconducting properties of piezoelectric semiconducting NWs is then of particular interest for the optimization of piezoelectric devices integrating such NWs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the diameter-dependent piezoelectric response of semiconducting ZnO nanowires by Piezoresponse Force Microscopy and FEM simulations

et al. 2023

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Semiconducting piezoelectric nanowires (NWs) are promising candidates to develop highly efficient mechanical energy transducers made of biocompatible and non-critical materials. The increasing interest in mechanical energy harvesting makes the investigation of the competition between piezoelectricity, free carrier screening and depletion in semiconducting NWs essential. To date, this topic has scarcely been investigated because of the experimental challenges raised by the characterization of the direct piezoelectric effect in these nanostructures. Here we get rid of these limitations using the PFM technique in DataCube mode and measuring the effective piezoelectric coefficient through the converse piezoelectric effect. We demonstrate a sharp increase in the effective piezoelectric coefficient of vertically aligned ZnO NWs as their radius decreases. We also present a numerical model that quantitatively explains this behavior by taking into account both the dopants and the surface traps. These results have a strong impact on the characterization and optimization of mechanical energy transducers based on vertically aligned semiconducting NWs.

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“…Nonetheless, we experienced an issue of maintained conductivity in the porous samples (the top layer nickel and remaining conductive GaN where electrically connected, through the porous layer) -this screens piezoelectricity in the porous GaN layer, and subsequently hinders magnetoelectricity. We attribute this to the highly doped sample chosen for these experiments (1.85•10 19 cm -3 ), compared to the lower value used in our previous work on enhanced piezoelectricity in porous GaN (5•10 18 cm -3 ) [30]), where the porous layer became non-conductive. The maintained conductivity has led the 'device' part of the work to focus on MR instead of ME coupling.…”

Section: Magnetoresistance Of Sputtered-ni/porous-gan Compositesmentioning

confidence: 94%

“…We found evidence for magneto-piezoresistive coupling in some of our samples. This work was inspired by our recent finding of enhanced piezoelectricity in porous GaN, where ∼ 40% porous GaN (in volume) exhibited a 3-fold enhancement of the piezoelectric charge coefficient (d 33 ) [30]. A similar approach has been considered for porous InP filled with magnetic material, following a reported enhanced piezoelectric response [31,32]; these reports however did not study the ME property coupling.…”

Section: Introductionmentioning

confidence: 99%

Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

Grishchenko¹,

Dawson²,

Ghosh³

et al. 2021

Preprint

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Multifunctional semiconductors widen the application scope of existing semiconductor devices. Here we report on the ferromagnetic/semiconductor coupling obtained through nickel and porous-GaN composites. We realised nickel-infiltrated and nickel-coated porous-GaN structures, and examined the subsequent magnetic and magnetotransport properties. We found that the magnetization of the porous-GaN/Ni composites strongly depended on the amount of deposited nickel and evolves from relatively isotropic and remanent (up to 90% remanent-to-saturation magnetization) response to an anisotropic response characteristic of thin-films. The magnetoresistance of nickel sputter-coated porous-GaN structures was measured at 300 and 200 K. The temperature dependant measurements suggested that transport in the GaN layers is dominating the current. Nonetheless, depending on sample pore size, the magnetoresistance displayed high (12-fold) out-of-plane/in-plane anisotropy, and significant hysteresis. These results are uncharacteristic of GaN transport and point towards magneto-piezo-resistive coupling between the nickel and the porous GaN. These results encourage deeper investigation of magnetic nanostructure property tuning and of magnetic property coupling to GaN and similar materials.

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Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity

Cited by 13 publications

References 54 publications

Porous ferroelectric materials for energy technologies: current status and future perspectives

Porous ferroelectric materials for energy technologies: current status and future perspectives

Investigation of the diameter-dependent piezoelectric response of semiconducting ZnO nanowires by Piezoresponse Force Microscopy and FEM simulations

Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

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