Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates

Abstract

An alternative-grating gated AlGaN/GaN field-effect transistor (FET) is proposed by considering the slit regions to be covered by a highly doped semiconductor acting as supplemental gates. The plasmonic resonant absorption spectra are studied at THz frequencies using the FDTD method. The 2DEGs, under supplemental gates, modulated by a positive voltage, can make the excitation of the higher order plasmon modes under metallic fingers more efficient in comparison to ungated regions in common slit-grating gate transistors. Moreover, the supplemental gates can confine the electric field of dipole oscillation between metallic gate fingers under THz radiation. The competition of the near-field enhancement and screening effect of the supplemental gate fingers results in the intensity of the higher order plasmon resonances being maximized at increased doping concentration. Our results demonstrate the possibility of significant improvement in the excitation of plasmon resonances in FETs for THz detection.

Plasmon switching effect based on graphene nanoribbon pair arrays

“…Researchers have put many efforts into plasmonic analogs of optical switching in metal-dielectric nanocomposites and metalinsulator-metal (MIM) waveguides, indicating nonlinear and fast optical responses near the frequency of surface plasmon resonance [8][9][10]. Further, graphene has become extremely important plasmon materials due to its own unique properties such as local field enhancement, flexible tunability, exceptionally high mobility at room temperature, special band structure and observable plasmon shifts through chemically induced doping [11][12][13][14][15]. Thanks to these unique properties, plasmon-induced optical switching in graphene nanostructure is more easily tunable by changing the doping level of graphene via physical or geometric parameters than that in previous metallic structure [16][17][18].…”

Full geometric simulation of miniaturized GaN double-heterojunction high electron mobility transistors by a multiscale approach coupling quantum and semi-classical transport

“…2 Multiscale approach APSYS software (Crosslight Software Inc.), which has been used to simulate various 2D and 3D electronic and optoelectronic devices (Guo et al 2013;Hu et al 2009;Wang et al 2012;Li et al 2013;Xia et al 2013a, b;Fu et al 2014;Lei et al 2014), is a finite-elementbased device simulator that has already incorporated several multiscale schemes. The most basic DD model in the software has been self-consistently coupled to the impact ionization model, intraband/interband tunneling model and non-local quantum well transport model (Xia et al 2013a, b).…”

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

“…The high-temperature application is one important advantage of the AlGaN/GaN-based devices over GaAsbased and Si devices [6][7][8]. It is well known that the strain and stress in the AlGaN barrier layer due to lattice mismatch (LMM) and thermal mismatch between AlGaN and the underlying layers have important effect on the formation and transport properties of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures [9][10][11]. Therefore, the investigation on the temperature dependence of stress or strain in AlGaN barrier layer is necessary for understanding the temperature-dependent electrical properties of AlGaN/GaN heterostructure and improving the reliability of the AlGaN/GaN based devices.…”