Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

Tsai, Tsung Yu; Jiang, Fa-Shen; Ho, ChiaHua; Lin, Chang-Hong; Tseng, Tseung‐Yuen

doi:10.1109/led.2016.2602886

Cited by 38 publications

(28 citation statements)

References 16 publications

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“…10 5 @ > 10 5 @ 200 TiN/HfO x /Ti [111] -+2 +0. Pt/HfO 2 /Cu Pt/HfO 2 /G/Cu [63] 3 µm 100 µA 2 µA 1000 10 000 100 ns 100 ns 10 7 10 7 10 4 @ 10 5 @ 125 Pt/Al 2 O 3 /Ag [113] -+1 +0.48 +0.15 1 mA 10 000 250 ns 10 3 10 5 @ 85 TiN/AlN/ZrO 2 /TiW/Cu [114] 5 µm +5.5 +0.6 -0.5 500 µA 100 50 ns 10 7 10 5 @ 85 Au/Ag-NWs/Au [71] 60 nm -+1 -0.5 10 mA 10 8 100 µs -10 4 @ 25 HF Pt/HfO 2 /Ag [81] 250 nm +0.7 +0.5 -0. 10 3 @ 10 4 @ 10 5 @ 10 5 @ 10 5 @ 10 5 @ 200 Pt/HfO 2 /Cu [76] 250 nm +0.7 +0.5 -0.3 100 µA 10 3 -10 8 10 8 @ 85 HfO x /Cu AlO x /Cu [82] Plug +2 +0.7 -0.5 100 µA 20 100 -10 4 4 × 10 4 10 5 @ 10 5 @ 200…”

Section: Switching Speed and Energy Consumptionmentioning

confidence: 99%

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

Small

138

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Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high‐density memory and neuromorphic devices are examined, and the various challenges of HfO2‐based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

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Section: Switching Speed and Energy Consumptionmentioning

confidence: 99%

“…In different types of RRAM devices, HfO 2 is one of the most researched switching oxide materials. [ 30–120 ] In RRAM devices, the actual resistive switching process is through filament formation or by controlling the interface. The HfO 2 is one of the established materials in CMOS domain along with SiO 2 , Al 2 O 3 , etc.…”

Section: Introductionmentioning

confidence: 99%

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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138

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“…The details of the mechanism of CBRAMs have been described elsewhere [4,5]. The performance of CBRAM devices has been studied with several materials as the solid electrolyte which include chalcogenides [6,7], insulating metal oxides [8][9][10][11][12][13][14] and bilayer materials [15,16]. CBRAM devices have demonstrated excellent performance in terms of operational voltage, read/write speed, endurance and data retention.…”

Section: Introductionmentioning

confidence: 99%

Structural origins of electronic conduction in amorphous copper-doped alumina

Subedi

Prasai

Kozicki

et al. 2019

Phys. Rev. Materials

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We perform an ab initio modeling of amorphous copper-doped alumina (a-Al2O3:Cu), a prospective memory material based on resistance switching, and study the structural origin of electronic conduction in this material. We generate molecular dynamics based models of a-Al2O3:Cu at various Cu-concentrations and study the structural, electronic and vibrational properties as a function of Cu-concentration. Cu atoms show a strong tendency to cluster in the alumina host, and metallize the system by filling the band gap uniformly for higher Cu-concentrations. We also study thermal fluctuations of the HOMO-LUMO energy splitting and observe the time evolution of the size of the band gap, which can be expected to have an important impact on the conductivity. We perform a numerical computation of conduction pathways, and show its explicit dependence on Cu connectivity in the host. We present an analysis of ion dynamics and structural aspects of localization of classical normal modes in our models.

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“…The nanoscale filament consists of metal ions, as experimentally confirmed by Transmission Electron Microscopy (TEM) and Energy-Dispersive X-ray Spectroscopy [34,35]. There are many material realizations exhibiting attractive switching and stability for these devices ranging from chalcogenides [36][37][38], oxides [39][40][41][42][43] to bilayer materials [44,45]. In this chapter, we study two materials: GeSe 3 :Ag and Al 2 O 3 :Cu.…”

Section: Introductionmentioning

confidence: 99%

Electronic conduction mechanisms in GeSe$_3$:Ag and Al$_2$O$_3$:Cu

Subedi¹,

Prasai²,

A.³

2019

Preprint

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In this paper, we discuss the atomistic structure of two conducting bridge computer memory materials, including Cu-doped alumina and silver-doped GeSe3. We show that the Ag is rather uniformly distributed through the chalcogenide glass, whereas the Cu strongly clusters in the alumina material. The copper oxide system conducts via extended state conduction through Cu atoms once the concentration becomes high enough to form connected Cu channels. What is more, the addition of Cu leads to extended states throughout the large alumina (host) optical gap. By contrast, Ag in the selenide host is not strongly conducting even if one imposes a very narrow nanowire geometry. All of these results are discussed using novel techniques for computing the conduction active parts of the network.

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Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

Cited by 38 publications

References 16 publications

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Structural origins of electronic conduction in amorphous copper-doped alumina

Electronic conduction mechanisms in GeSe$_3$:Ag and Al$_2$O$_3$:Cu

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Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

Cited by 38 publications

References 16 publications

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Structural origins of electronic conduction in amorphous copper-doped alumina

Electronic conduction mechanisms in GeSe$_3$:Ag and Al$_2$O$_3$:Cu

Contact Info

Product

Resources

About

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories