Enhanced quantum efficiency of Pd<sub>2</sub>Si Schottky infrared diodes on 〈111〉 Si

McKee, Richard

doi:10.1109/t-ed.1984.21639

Cited by 5 publications

(2 citation statements)

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“…Interestingly, the upper limit for this range is tunable as it depends on the distance d , as k ρ ∼ 1/ d . We finally note that various interband transitions in the silicide layer could be also investigated simply by growing silicides on silicon substrate having different crystallographic orientations …”

Section: Resultsmentioning

confidence: 99%

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Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion

et al. 2017

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Near-field thermophotovoltaics (NFTPV) is a promising approach for direct conversion of heat to electrical power. This technology relies on the drastic enhancement of radiative heat transfer (compared to conventional blackbody radiation) that occurs when objects at different temperatures are brought to deep subwavelength distances (typically <100 nm) from each other. Achieving such radiative heat transfer between a hot object and a photovoltaic (PV) cell could allow direct conversion of heat to electricity with a greater efficiency than using current solid-state technologies (e.g., thermoelectric generators). One of the main challenges in the development of this technology, however, is its incompatibility with conventional silicon PV cells. Thermal radiation is weak at frequencies larger than the ∼1.1 eV bandgap of silicon, such that PV cells with lower excitation energies (typically 0.4-0.6 eV) are required for NFTPV. Using low bandgap III-V semiconductors to circumvent this limitation, as proposed in most theoretical works, is challenging and therefore has never been achieved experimentally. In this work, we show that hot carrier PV cells based on Schottky junctions between silicon and metallic films could provide an attractive solution for achieving high efficiency NFTPV electricity generation. Hot carrier science is currently an important field of research and several approaches are investigated for increasing the quantum efficiency (QE) of hot carrier generation beyond conventional Fowler model predictions. If the Fowler limit can indeed be overcome, we show that hot carrier-based NFTPV systems-after optimization of their thermal radiation spectrum-could allow electricity generation with up to 10-30% conversion efficiencies and 10-500 W/cm generated power densities (at 900-1500 K temperatures). We also discuss how the unique properties of thermal radiation in the extreme near-field are especially well suited for investigating recently proposed approaches for high QE hot carrier junctions. We therefore expect our work to be of interest for the field of hot carrier science and-by relying solely on conventional thin film materials-to provide a path for the experimental demonstration of NFTPV energy conversion.

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Section: Resultsmentioning

confidence: 99%

“…We finally note that various interband transitions in the silicide layer could be also investigated simply by growing silicides on silicon substrate having different crystallographic orientations. 54…”

Section: T H Imentioning

confidence: 99%

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion

et al. 2017

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High-Speed Internal Photoemission Detectors Enhanced by Grating Coupling to Surface Plasma Waves

Brueck

Diadiuk

Jones

et al. 1985

Picosecond Electronics and Optoelectronics

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Optical response at 10.6 μm in tungsten silicide Schottky barrier diodes

Kumar

Boyd

Jackson

1987

Journal of Applied Physics

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Optical response to radiation at a wavelength of 10.6 /-lm in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 /-lm. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.3848

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Enhanced quantum efficiency of Pd₂Si Schottky infrared diodes on 〈111〉 Si

Cited by 5 publications

References 1 publication

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion

High-Speed Internal Photoemission Detectors Enhanced by Grating Coupling to Surface Plasma Waves

Optical response at 10.6 μm in tungsten silicide Schottky barrier diodes

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Enhanced quantum efficiency of Pd2Si Schottky infrared diodes on 〈111〉 Si

Cited by 5 publications

References 1 publication

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion

High-Speed Internal Photoemission Detectors Enhanced by Grating Coupling to Surface Plasma Waves

Optical response at 10.6 μm in tungsten silicide Schottky barrier diodes

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Enhanced quantum efficiency of Pd₂Si Schottky infrared diodes on 〈111〉 Si