2011
DOI: 10.1063/1.3584871
|View full text |Cite
|
Sign up to set email alerts
|

Enhanced Raman scattering from vertical silicon nanowires array

Abstract: We fabricated ordered hexagonal-packed vertical silicon nanowire ͑SiNW͒ arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 m, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume ͑REV͒ increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-m-long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder struc… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
22
1

Year Published

2013
2013
2024
2024

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 25 publications
(25 citation statements)
references
References 15 publications
2
22
1
Order By: Relevance
“…The shift of Raman spectrum increases, while the laser wavelength changes from 785 to 514 nm due to the stronger light absorption [12]. In the case of VLS-and MACESiNWs, besides the downshift and broadening of Raman spectra, it was also observed an increase in the intensity of the Raman spectra relative to the Raman spectrum of c-Si under the same conditions [16][17][18][19]. The enhancement of Raman intensity was explained by an effect of partial light localization because of the strong light scattering in SiNW array [19].…”
mentioning
confidence: 95%
“…The shift of Raman spectrum increases, while the laser wavelength changes from 785 to 514 nm due to the stronger light absorption [12]. In the case of VLS-and MACESiNWs, besides the downshift and broadening of Raman spectra, it was also observed an increase in the intensity of the Raman spectra relative to the Raman spectrum of c-Si under the same conditions [16][17][18][19]. The enhancement of Raman intensity was explained by an effect of partial light localization because of the strong light scattering in SiNW array [19].…”
mentioning
confidence: 95%
“…(3). 24,30) In Eq. (3), q is the elementary charge, G the net carrier generation rate, L e the hole diffusion length, W the width of the deletion region, and L n the electron diffusion length.…”
Section: Resultsmentioning
confidence: 99%
“…3(b), owing to more scattering and light trapping. 23,24) However, after a 30 s etching time, the reflectance of the SiNW-textured Si wafer sharply increased and the SiNW length also increased. This might have resulted from the pyramidal structure etched by Ag particles.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…31,32 Briey, 300 nm polystyrene (PS) nanospheres were diluted with ethanol, then injected slowly onto the water surface to form a close-packed monolayer. Firstly, a layer of photoresist (PR) was coated on top to dene the area of the microuidic channel.…”
Section: Fabrication Of Ag/sinp Arrays In Microuidic Channelsmentioning
confidence: 99%