Enhanced resolution for future fabrication

Managing Temperature Effects in Nanoscale Adaptive Systems

“…In the meantime, fabrication limitations have been improved through techniques such as layout regularity [128] or double exposure [129], which are fundamental changes in design and fabrication methodologies rather than improving patterning resolutions. where τ d is delay, C L is load capacitance, V DD is supply voltage, I D is drain current, P dyn is dynamic power dissipation, P sc is short-circuit power dissipation, P leak is leakage power dissipation,  sw is switching activity factor, V swing is voltage swing, f is clock frequency, t sc is the time short circuit power is dissipated, I peak is the peak current drawn during switching, and I leak is leakage current.…”

Engineering surface and development of a new DNA micro array chip

“…Its resolution depends on the numerical aperture (NA) of the lens and the wavelength of the light source. The ArF Excimer laser of 193 nm radiation and the 158 nm laser were developed to suit the requirement of fabricating submicron structural features [28][29][30][31]. Further scaling down of features is difficult to achieve in photolithographic process owing to the limitations imposed by the light, numerical aperture and associated depth of focus.…”