Low-temperature
tip-enhanced Raman spectroscopy (TERS) enables
chemical identification with single-molecule sensitivity and extremely
high spatial resolution even down to the atomic scale. The large enhancement
of Raman scattering obtained in TERS can originate from physical and/or
chemical enhancement mechanisms. Whereas physical enhancement requires
a strong near-field through excitation of localized surface plasmons,
chemical enhancement is governed by resonance in the electronic structure
of the sample, which is also known as resonance Raman spectroscopy.
Here we report on tip-enhanced resonance Raman spectroscopy (TERRS)
of ultrathin ZnO layers epitaxially grown on a Ag(111) surface, where
both enhancement mechanisms are operative. In combination with scanning
tunneling spectroscopy (STS), it is demonstrated that the TERRS intensity
strongly depends on the local electronic resonance of the ZnO/Ag(111)
interface. We also reveal that the spatial resolution of TERRS is
dependent on the tip–surface distance and reaches nearly 1
nm in the tunneling regime, which can be rationalized by strong-field
confinement resulting from an atomic-scale protrusion on the tip apex.
Comparison of STS and TERRS mapping clearly shows a correlation between
resonantly enhanced Raman scattering and the local electronic states
at near-atomic resolution. Our results suggest that TERRS is a new
approach for the atomic-scale optical characterization of local electronic
states.