To mimic the natural photosynthesis system, a Z-scheme
heterostructure
is proposed as a viable and effective strategy for efficient solar
energy utilization such as photocatalysis and photoelectrochemical
(PEC) water splitting due to the high carrier separation efficiency,
fast charge transport, strong redox, and wide light absorption. However,
it remains a huge challenge to form a direct Z-scheme heterostructure
due to the internal electric-field restriction and vital band-alignment
at the interface. Herein, the van der Waals heterostructure based
on the allotrope SnSe2 and SnSe is designed and synthesized
by a two-step vapor phase deposition method to overcome the limitation
in the formation of the Z-scheme heterostructure for the first time.
The Z-scheme heterostructure of SnSe2/SnSe is confirmed
by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy,
PEC measurement, density functional theory calculations, and water
splitting. Strikingly, the PEC photodetectors based on the Z-scheme
heterostructure show a synergistic effect of superior stability from
SnSe and fast photoresponse from SnSe2. As such, the SnSe2/SnSe Z-scheme heterostructure shows a good photodetection
performance in the ultraviolet to visible wavelength range. Furthermore,
the photodetector shows a faster response/recovery time of 13/14 ms,
a higher photosensitivity of 529.13 μA/W, and a higher detectivity
of 4.94 × 109 Jones at 475 nm compared with those
of single components. Furthermore, the photodetection stability of
the SnSe2/SnSe is also greatly improved by a-thin-Al2O3-layer passivation. The results imply the promising
rational design of a direct Z-scheme heterostructure with efficient
charge transfer for high performance of optoelectronic devices.