2015
DOI: 10.1016/j.nanoen.2014.12.033
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Enhanced solar hydrogen generation of high density, high aspect ratio, coaxial InGaN/GaN multi-quantum well nanowires

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Cited by 101 publications
(75 citation statements)
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“…This indicates the increase of IPCE efficiency to about 37%. Finally, the obtained values of IPCE, ABPE, and J ph of the present study are compared with the previously reported values of relevant or similar materials as shown in Table . The reported values in this study for IPCE and ABPE are higher than that previously obtained for the displayed materials or composites as shown in Table .…”
Section: Resultssupporting
confidence: 52%
“…This indicates the increase of IPCE efficiency to about 37%. Finally, the obtained values of IPCE, ABPE, and J ph of the present study are compared with the previously reported values of relevant or similar materials as shown in Table . The reported values in this study for IPCE and ABPE are higher than that previously obtained for the displayed materials or composites as shown in Table .…”
Section: Resultssupporting
confidence: 52%
“…Enhanced solar cells with various semiconductor nanowires and diverse formation of P/N junctions were widely reported based on the feature of high absorption of solar spectrum and collection of photogenerated carriers of nanowires [88][89][90][91][92][93][94][95][96][97]. Ebaid [98] investigated the combination between the band gap engineering and performance of solar cell by tuning the content of In, as shown in Fig. 18.…”
Section: Characterization Of Nanowires For Photovoltaicsmentioning
confidence: 99%
“…(b) The PL spectra showing the successful band gap engineering of InGaN alloy by altering the In content. (c) The PEC properties of the band gap engineered InGaN/GaN MQW-NWHs represented by the linear sweeps of the photocurrent as a function of the In content of the InGaN shells[98].…”
mentioning
confidence: 99%
“…The hydrogen evolution reaction (HER), which hasg ained increasingi nterest as ac arbon-free route to H 2 generation,i sa classical approach to investigate ac hemical property. [25][26][27][28][29] The utilisation of III-nitrides emiconductors for photo-/electrochemical water splittingh as attracted considerable attention. [17][18][19][20] Galliumn itride (GaN) crystalsd isplayn umerous excellent properties,s uch as high carrierc oncentration, thermal conductivity and chemical stability.…”
Section: Introductionmentioning
confidence: 99%