2017
DOI: 10.1103/physrevb.96.064405
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Enhanced spin-orbit torque by engineering Pt resistivity in Pt/Co/AlOx structures

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Cited by 73 publications
(38 citation statements)
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“…In Fig. 4, such an enhanced STT efficiency was achieved by optimizing the Pt thickness compared to the reported results [14,15,[19][20][21][22][23][24][25][26][27][28][29][30][31][32]. Both axis are the transverse component and longitudinal component of the STT efficiency.…”
Section: Resultsmentioning
confidence: 72%
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“…In Fig. 4, such an enhanced STT efficiency was achieved by optimizing the Pt thickness compared to the reported results [14,15,[19][20][21][22][23][24][25][26][27][28][29][30][31][32]. Both axis are the transverse component and longitudinal component of the STT efficiency.…”
Section: Resultsmentioning
confidence: 72%
“…We experimentally demonstrated that the STT efficiency in Ta/Pt/FM structures can be enhanced while the Pt layer has a specific thickness. The enhanced STT efficiency is almost 4 times larger than those reported [14,20,24,27,31,32]. Our work provides a new approach to further reduce power consumption in magnetization switching.…”
Section: Introductionmentioning
confidence: 73%
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“…To confirm the thickness dependence of the SOT shown in Figure 3, we first test the SOT-induced switching of the samples with different values of t Ta under B x = +50 mT. Thus, the overall trend of the switching current versus t Ta is qualitatively consistent with that of the B DL , [30,31,36] but the t Ta for the largest switching efficiency (or smallest switching current) is slightly smaller than the t Ta for the largest B DL (Figure 3). Moreover, the switching currents of both samples are smallest for t Ta of 1.5-2 nm and increase with either increasing or decreasing t Ta .…”
Section: Current-induced Switching Of Perpendicular Magnetizationmentioning
confidence: 59%
“…Since the SOT exerted on the top CoFeB layer is of interest, we remove the contribution of the bottom FM layers to V 1ω and V 2ω . Between the two sources of SOT, SHE in HM and interface-generated spin current of FM/HM [8,[21][22][23]29,30] in the FM/Ta/CoFeB trilayer structures, the latter dominates for thin HM, while the former dominates for thick HM. [4,24] Moreover, V 2ω is modified by removing the anomalous Nernst voltage of the bottom FM layers induced by vertical temperature gradient, [4,21,28] which is not relevant to the SOT.…”
Section: Introductionmentioning
confidence: 99%