Enhanced stability of filament-type resistive switching by interface engineering

Zhu, Ying; Zheng, Ke; Wu, Xing; Ang, L. K.

doi:10.1038/srep43664

Cited by 71 publications

(54 citation statements)

References 31 publications

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“…In addition, the slope of the double‐logarithmic plot is close to 2 at high electric field in the HRS of Ag/ZnO/Pt, which means the current density J is proportional to V 2 . These results correspond to the space‐charge‐limited conduction (SCLC) that followed the ohmic conduction behavior ( I ∝ V ) at low electric field and Child's law ( I ∝ V 2 ) at high electric field . The space‐charge‐limited current is caused by the injection of electrons at an ohmic contact of the Ag/ZnO interface.…”

supporting

confidence: 57%

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Ting

Chen

et al. 2019

Advanced Science

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The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D‐VRRAM arrays are designed. Two‐layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross‐point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications.

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supporting

confidence: 57%

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Ting

Chen

et al. 2019

Advanced Science

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“…Vacancy defect creates dangling bonds in the material. The transportation process would be affected by such defect . Different types of vacancy defects are found in 2D materials .…”

Section: Vacancy Defectsmentioning

confidence: 99%

“…The transportation process would be affected by such defect. 87 Different types of vacancy defects are found in 2D materials. 60,68,69,88,89 There, two typical examples are listed to analyze the relationship between vacancy defects and PL.…”

Section: Vacancy Defectsmentioning

confidence: 99%

Characterization of atomic defects on the photoluminescence in two‐dimensional materials using transmission electron microscope

Zhang

Wang

et al. 2019

InfoMat

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Two‐dimensional material (2D) that possesses atomic thin geometry and remarkable properties is a star material for the fundamental researches and advanced applications. Defects in 2D materials are critical and fundamental to understand the chemical, physical, and optical properties. Photoluminescence arises in 2D materials owing to various physical phenomena including activator/dopant‐induced luminescence and defect‐related emissions, and so forth. With the advanced transmission electron microscopy (TEM) technologies, such as aberration correction and low voltage technologies, the morphology, chemical compositions and electronic structures of defects in 2D material could be directly characterized at the atomic scale. In this review, we introduce the applications of state‐of‐the‐art TEM technologies on the studies of the role of atomic defects in the photoluminescence characteristics in 2D material. The challenges in spatial and time resolution are also discussed. It is proved that TEM is a powerful tool to pinpoint the relationship between the defects and the photoluminescence characteristics.

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“…In 2008, HP Labs realized memristors physically in nanoscale titanium dioxide cross-point resistive switches [24]. In this operation, the device exhibits pinched current-voltage(I-V) hysteresis indicating a resistive memory effect, and the conductive area is adjusted by the concentration of oxygen vacancies, which determine the whole conductive states (resistive switching state), that is, high resistance state (HRS) and low resistance state (LRS [55][56][57] heterostructures. Table 1 gives a summary of the recent work of oxide-based memristors including memristive properties.…”

Section: Synaptic Devices Based On Metal Oxide Memristorsmentioning

confidence: 99%

Synaptic Behavior in Metal Oxide-Based Memristors

Hu¹,

Wu²,

Li³

2018

Advances in Memristor Neural Networks - Modeling and Applications

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With the end of Moore's law in sight, new computing paradigms are needed to fulfill the increasing demands on data and processing potentials. Inspired by the operation of the human brain, from the dimensionality, energy and underlying functionalities, neuromorphic computing systems that are building upon circuit elements to mimic the neurobiological activities are good concepts to meet the challenge. As an important factor in a neuromorphic computer, electronic synapse has been intensively studied. The utilization of transistors, atomic switches and memristors has been proposed to perform synaptic functions. Memristors, with several unique properties, are exceptional candidates for emulating artificial synapses and thus for building artificial neural networks. In this paper, metal oxide-based memristor synapses are reviewed, from materials, properties, mechanisms, to architecture. The synaptic plasticity and learning rules are described. The electrical switching characteristics of a variety of metal oxide-based memristors are discussed, with a focus on their application as biological synapses.

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Enhanced stability of filament-type resistive switching by interface engineering

Cited by 71 publications

References 31 publications

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Characterization of atomic defects on the photoluminescence in two‐dimensional materials using transmission electron microscope

Synaptic Behavior in Metal Oxide-Based Memristors

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