Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlO _X Dielectric

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

“…Beyond-Si devices that can be co-integrated additively on Si-based complementary metal–oxide–semiconductor (CMOS) chips, include carbon nanotube (CNT) field-effect transistors (FETs) 4 – 6 , two-dimensional (2D) materials 7 – 10 , and oxide semiconductors 11 , 12 . Among them, oxide semiconductors, such as indium gallium zinc oxide (IGZO) 13 – 15 , indium oxide (In 2 O 3 ) 16 , and zinc oxide (ZnO) 17 – 22 , are well poised to be competitive n-channel materials beyond silicon due to their low thermal budget process, good transparency, process maturity for large scale deposition, and decent electrical properties, such as high carrier mobility, wide bandgap, low gate leakage 23 , 24 . These merits make them suitable for backend-of-line (BEOL) integration as memory drivers in memory-centric computing cells or high-performance thin-film transistor (TFT)-based BEOL logic circuitries (Fig.…”

“…Of these promising n-channel oxide candidates, polycrystalline ZnO exhibits one of the highest carrier mobility through proper crystallinity and oxygen vacancies ( V O ) tuning 17 , 22 . In addition, its other advantageous properties, such as wide direct bandgap (~3.3 eV) and high thermal conductivity, make ZnO a strong competitor to complement the matured and conventional silicon.…”