Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth

Rijnders, Guus; Blank, Dave H.A.; Choi, Jonghyun; Eom, Chang‐Beom

doi:10.1063/1.1640472

Cited by 175 publications

(201 citation statements)

References 16 publications

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“…In all calculations the slabs were terminated with a SrO surface, to be consistent with that experimentally observed to be the most thermodynamically stable. 81 In Fig. 11 we plot the Ru magnetic moment ͑per f.u.͒ as a function of increasing slab thickness.…”

Section: Cubic Lsda Slabsmentioning

confidence: 99%

Electronic properties of bulk and thin filmSrRuO3: Search for the metal-insulator transition

et al. 2008

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We calculate the properties of the 4d ferromagnet SrRuO 3 in bulk and thin film form with the aim of understanding the experimentally observed metal-to-insulator transition at reduced thickness. Although the spatial extent of the 4d orbitals is quite large, many experimental results have suggested that electron-electron correlations play an important role in determining this material's electronic structure. In order to investigate the importance of correlation, we use two approaches which go beyond the conventional local-density approximation to density-functional theory ͑DFT͒: the local spin-density approximation+ Hubbard U ͑LSDA+ U͒ and the pseudopotential self-interaction correction ͑pseudo-SIC͒ methods. We find that the details of the electronic structure predicted with the LSDA do not agree with the experimental spectroscopic data for bulk and thin film SrRuO 3 . Improvement is found by including electron-electron correlations, and we suggest that bulk orthorhombic SrRuO 3 is a moderately correlated ferromagnet whose electronic structure is best described by a 0.6 eV on-site Hubbard term, or equivalently with corrections for the self-interaction error. We also perform ab initio transport calculations that confirm that SrRuO 3 has a negative spin polarization at the Fermi level, due to the position of the minority Ru 4d band center. Even with static correlations included in our calculations we are unable to reproduce the experimentally observed metal-insulator transition, suggesting that the electronic behavior of SrRuO 3 ultrathin films might be dominated by extrinsic factors, such as surface disorder and defects, or due to dynamic spin correlations which are not included in our theoretical methods.

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Section: Cubic Lsda Slabsmentioning

confidence: 99%

Electronic properties of bulk and thin filmSrRuO3: Search for the metal-insulator transition

et al. 2008

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“…2.6a and d). [49,52,53] The RHEED patterns before and after SrRuO 3 growth (Fig. 2.7c-f) confirmed the crystallinity of the surface layer.…”

Section: Confirmation Of Complete Single Terminationmentioning

confidence: 62%

“…During SrRuO 3 growth on TiO 2 terminated SrTiO 3 , the surface termination switches from B to A-site termination, since RuO 2 is volatile. [49] As a result, the first RHEED oscillation lasts longer than the following oscillations, which is clearly visible in Figure 2.7a. The first oscillation on DyScO 3 was also elongated, implying that the DyScO 3 surface was ScO 2 terminated, which is in agreement with the AR-MSRI measurements.…”

Section: Confirmation Of Complete Single Terminationmentioning

confidence: 81%

“…An example is given in Figure 2.6a with its corresponding line profile in Figure 2.6b. [49] However, (110). The insets show AFM height images of the corresponding substrates, where E and A denote substrates after wet Etching and after Annealing respectively.…”

Section: Confirmation Of Complete Single Terminationmentioning

confidence: 99%

“…As a result, the mixed or single termination can easily be observed in the morphology of the SrRuO 3 layer by AFM and STM. [44,[49][50][51] From SrRuO 3 on SrTiO 3 (001) studies, it is known that initial two dimensional SrRuO 3 growth occurs when the substrate is singly terminated. An example is given in Figure 2.6a with its corresponding line profile in Figure 2.6b.…”

Section: Confirmation Of Complete Single Terminationmentioning

confidence: 99%

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Reconstructions at complex oxide interfaces

Kleibeuker

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Atomically Defined Rare‐Earth Scandate Crystal Surfaces

Kleibeuker

Koster

Siemons

et al. 2010

Adv Funct Materials

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The fabrication of well‐defined, atomically sharp substrate surfaces over a wide range of lattice parameters is reported, which is crucial for atomically regulated epitaxial growth of complex oxide heterostructures. By applying a framework for controlled selective wet etching of complex oxides on the stable rare‐earth scandates (REScO3), apseudocubic = 0.394 – 0.404 nm, the large chemical sensitivity of REScO3 to basic solutions is exploited, which results in reproducible, single‐terminated surfaces. Time‐of‐flight mass‐spectroscopy measurements show that after wet etching the surfaces are predominantly ScO2 ‐terminated. Moreover, the morphology study of SrRuO3 thin‐film growth gives no evidence for mixed termination. Therefore, it is concluded that the REScO3 surfaces are completely ScO2 ‐terminated.

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Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth

Cited by 175 publications

References 16 publications

Electronic properties of bulk and thin filmSrRuO3: Search for the metal-insulator transition

Electronic properties of bulk and thin filmSrRuO3: Search for the metal-insulator transition

Reconstructions at complex oxide interfaces

Atomically Defined Rare‐Earth Scandate Crystal Surfaces

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