2021
DOI: 10.3390/ma14092284
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Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores

Abstract: This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indenta… Show more

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Cited by 5 publications
(2 citation statements)
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“…3D woven spacer Kevlar/ polyimide composites prepared by combining 3D weaving technology and thermal imidization process exhibited more than 96% of the retention rate of their compressive strength and a low dielectric constant of 1.36 when the temperature was rose to 300 C. 17 Moreover, the thermomechanical stability and reliability of an ultralow-k dielectric film can be significantly enhanced through fabricating a porous SiCOH dielectric thin film. 18 Although these methods are feasible, complex steps, and expensive materials were usually involved.…”
Section: Introductionmentioning
confidence: 99%
“…3D woven spacer Kevlar/ polyimide composites prepared by combining 3D weaving technology and thermal imidization process exhibited more than 96% of the retention rate of their compressive strength and a low dielectric constant of 1.36 when the temperature was rose to 300 C. 17 Moreover, the thermomechanical stability and reliability of an ultralow-k dielectric film can be significantly enhanced through fabricating a porous SiCOH dielectric thin film. 18 Although these methods are feasible, complex steps, and expensive materials were usually involved.…”
Section: Introductionmentioning
confidence: 99%
“…A class of porous materials that requires a proper porous design is the low-k dielectric thin films used as interlayer insulators in microelectronic applications 12 , 13 . For instance, during the fabrication of low-k thin films, large and interconnected pores result in observable plasma-induced damages that cause charges to build up and ultimately increase the leakage current 14 . Furthermore, porous low-k dielectrics with interconnected pores have poor mechanical properties, which complicates their incorporation into microchips 15 .…”
Section: Introductionmentioning
confidence: 99%