2018
DOI: 10.1007/s10854-018-9996-x
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Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping

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Cited by 20 publications
(13 citation statements)
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“…Among the state‐of‐the‐art thermoelectric materials, tin selenide (SnSe) is one of the most promising candidates to apply to thermoelectric devices due to its environmentally friendly feature, high cost‐effectiveness, and outstanding thermoelectric performance derived from its appropriate bandgap of ≈0.9 eV and intrinsic low κ l 9,10 . Figure a shows the development timeline for all SnSe‐based bulk thermoelectric materials,11–124 from which a record high ZT of ≈2.8 at 773 K was found in the n‐type SnSe single crystal,11 derived from its ultralow κ l of ≈0.18 W m −1 K −1 and high S 2 σ of ≈9.0 µW cm −1 K −2 at this temperature 125. Such a high ZT is also very competitive to other state‐of‐the‐art thermoelectric systems which possess ZTs > 2, such as PbTe,126–134 GeTe,135–147 Cu 2 Se/Cu 2 S,148–157 and AgSbTe 2 158.…”
Section: Introductionmentioning
confidence: 97%
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“…Among the state‐of‐the‐art thermoelectric materials, tin selenide (SnSe) is one of the most promising candidates to apply to thermoelectric devices due to its environmentally friendly feature, high cost‐effectiveness, and outstanding thermoelectric performance derived from its appropriate bandgap of ≈0.9 eV and intrinsic low κ l 9,10 . Figure a shows the development timeline for all SnSe‐based bulk thermoelectric materials,11–124 from which a record high ZT of ≈2.8 at 773 K was found in the n‐type SnSe single crystal,11 derived from its ultralow κ l of ≈0.18 W m −1 K −1 and high S 2 σ of ≈9.0 µW cm −1 K −2 at this temperature 125. Such a high ZT is also very competitive to other state‐of‐the‐art thermoelectric systems which possess ZTs > 2, such as PbTe,126–134 GeTe,135–147 Cu 2 Se/Cu 2 S,148–157 and AgSbTe 2 158.…”
Section: Introductionmentioning
confidence: 97%
“…A summary of ZTs for SnSe‐based thermoelectric materials. a) The timeline for state‐of‐the‐art SnSe bulks thermoelectric materials,11–124,169–182 the performance achieved by solution route are circled by yellow. b) Temperature‐dependent ZT and c) corresponding peak and average ZT values for polycrystalline SnSe through different fabrication techniques 13,16,22,46,58,62,95,99,101.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, there have been extensive follow-up investigations on SnSe and related materials aiming to further improve their TE performances through various approaches. [7][8][9][10][11][12][13][14][15][16][17] Among them, the most commonly used one is the chemical substitutions for Sn/Se or introducing vacancies.…”
Section: Introductionmentioning
confidence: 99%
“…The Cu‐doped polycrystalline p ‐type Sn 1− x Cu x Se material was prepared by BM and HP. [ 387 ] In this case, polycrystalline Cu‐doped SnSe was prepared by traditional melting, ball‐milling, and hot‐pressing. Due to carrier optimization via Cu doping, a peak zT of 0.66 was observed in Sn 0.98 Cu 0.02 Se at 813 K. In LaCl 3 doped polycrystalline SnSe synthesized by combining MA and SPS, [ 388 ] the σ is enhanced after doping due to increased n( μ ) and increased S over 300 µV K −1 , resulting in a high PF at 750 K and a lower κ (< 1.0 W m −1 K −1 ) over the entire temperature range measured.…”
Section: Traditional Versus Green Sustainable Te Materials Synthesis ...mentioning
confidence: 99%