Despite
the attractive thermoelectric properties in single crystals,
the fabrication of high-performance polycrystalline SnSe by a cost-effective
strategy remains challenging. In this study, we prepare the undoped
SnSe ceramic with remarkable thermoelectric efficiency by the combination
of a cold sintering process (CSP) and thermal annealing. The high
sintering pressure during CSP induces not only highly oriented grains
but also a high concentration of lattice dislocations and stacking
faults, which leads to large lattice strain that can shorten the phonon
relaxation time. Meanwhile, the thermal annealing breaks the highly
resistive SnO
x
layers at grain boundaries,
which improves the electrical conductivity and power factor. In addition,
the grain growth during annealing further turns the broken SnO
x
layers into nanoparticles, which further
lowers the thermal conductivity by enhanced scattering. As a result,
a peak ZT of 1.3 at 890 K and a high average ZT of 0.69 are achieved in the polycrystalline SnSe, suggesting
great potential in mid-temperature power generation. This work may
pave the way for the mass production of SnSe-based ceramics for thermoelectric
devices.