Enhanced thermoelectric performance of band structure engineered GeSe_1−xTe_x alloys

Abstract

Nanostructured thermoelectric materials of GeSe1-xTex (0 ≤ x ≤ 0.2) alloys were prepared by a novel hydrogen decrepitation method and their structural, morphological, thermoelectric properties were investigated. The XRD analysis...

Crystal Structure Engineering as a Means of Boosting the Thermoelectric Performance of GeSe

“…致 的 [16,17] 系数(> 600 μV/K) [12,18,19] ，并且电导率随温度升高而增加，而 Seebeck 系数随温度升 高而降低，呈现出典型的半导体传导特征 [20,21] 。在 x≥0.15 [22][23][24] 。 我 们 利 用 Goldsmit-sharp 关 系 式 [25] ：…”

Geometrical Optimization and Transverse Thermoelectric Performances of Fe/Bi2Te2.7Se0.3 Artificially Tilted Multilayer Thermoelectric Devices

“…The performance of TE technology is determined by the figure of merit (ZT) [4]. Over the past two decades, great advancements, including band-structure engineering [5][6][7], phonon engineering [8][9][10][11] and magnetoelectric engineering [12,13], have been proposed to enhance the ZT values of traditional TE materials. Nevertheless, the parallel or anti-parallel relationship between the electrical current (I) and the heat flow (Q) impedes the progress of optimizing the transport parameters in an individual way to the higher ZT values.…”

Thermoelectric performance of multiphase GeSe‐CuSe composites prepared by hydrogen decrepitation method

“…It is noteworthy to mention that making materials with multiphase, where the heterojunction between the multiple phases with different band gaps and larger carrier density than the host matrix will greatly improve the electron transport properties 18 . The thermoelectric properties of Cu‐added multiphase GeSe materials have not been reported in detail 21 . Moreover, GeSe has been useful in other applications such as photovoltaic, 33 photonic devices with thin‐film structure, 34,35 resistive memory cells, 36 optoelectronics, 37,38 and electrochemical memory cells 39‐41 …”