Enhanced thermoelectric performance of Cu2Se by tuning the aligned lamella microstructure

Zhang, Ting; Song, Yutao; Zhang, Xiao; He, Xiaojun; Jiang, Jun

doi:10.1016/j.matlet.2019.05.009

Cited by 12 publications

(5 citation statements)

References 8 publications

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“…The mechanism is not investigated or presented by Bin Zhong et al, but they stated that it stems from the highly aligned Cu + ion layers in the aligned lamellae, which lower the lattice thermal conductivity. Similar results are found in Ting Zhang’s work [ 49 ]. They obtained the same microstructure of highly aligned Cu 2 Se material, but without any dopants.…”

Section: Doping By Group Iiia Elementssupporting

confidence: 91%

“…They draw a conclusion that the TE performance of Cu 2 Se has low dependence on the grain size and the density of grain boundary, the high TE performance almost all comes from the liquid like behavior of Cu + ions. This point of view is validified, to some degree, by the work of Ting Zhang et al [ 49 ]. In their study, samples synthesized by powders with larger grain sizes possess higher ZT values.…”

Section: Discussionmentioning

confidence: 78%

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Doping Effect on Cu2Se Thermoelectric Performance: A Review

et al. 2020

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Cu2Se, owing to its intrinsic excellent thermoelectric (TE) performance emerging from the peculiar nature of “liquid-like” Cu+ ions, has been regarded as one of the most promising thermoelectric materials recently. However, the commercial use is still something far from reach unless effective approaches can be applied to further increase the figure of merit (ZT) of Cu2Se, and doping has shown wide development prospect. Until now, the highest ZT value of 2.62 has been achieved in Al doped samples, which is twice as much as the original pure Cu2Se. Herein, various doping elements from all main groups and some transitional groups that have been used as dopants in enhancing the TE performance of Cu2Se are summarized, and the mechanisms of TE performance enhancement are analyzed. In addition, points of great concern for further enhancing the TE performance of doped Cu2Se are proposed.

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Section: Doping By Group Iiia Elementssupporting

confidence: 91%

Section: Discussionmentioning

confidence: 78%

Doping Effect on Cu2Se Thermoelectric Performance: A Review

et al. 2020

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“…The time resolution is about 230 ps. A 22 NaCl positron source with an intensity of ∼30 μCi was sandwiched between two identical bulk samples. The total counts of 1 × 10 6 were collected for each spectrum.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…As one of the most typical PLEC superionic conductors for TE application, Cu 2 Se has sparked much excitement recently due to the advantages of low toxicity, low cost, and earth-abundance. − Cu 2 Se is a p-type semiconductor with a band gap of ∼1.23 eV. It undergoes a phase transition from the low-temperature monoclinic phase (α-Cu 2 Se) to the high-temperature cubic phase (β-Cu 2 Se) at about 410 K .…”

Section: Introductionmentioning

confidence: 99%

Synergetic Optimization of Electrical and Thermal Transport Properties by Cu Vacancies and Nanopores in Cu₂Se

Zhao

Ning

et al. 2021

ACS Appl. Mater. Interfaces

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In this study, a series of Cu2+x–y In y Se (−0.3 ≤ x ≤ 0.2 and 0 ≤ y ≤ 0.05) samples were prepared by melting and the spark plasma sintering method. X-ray diffraction measurements indicate that the Cu-deficient samples (x = −0.3 y = 0 and x = −0.2 y = 0) prefer to form the cubic phase (β-Cu2Se). Adding excessive Cu or introducing In atoms into the Cu2Se matrix triggers a phase transition from the β to α phase. Positron lifetime measurements confirm the reduction in Cu vacancy concentration by adding excessive Cu or introducing In atoms into Cu2Se, which causes a dramatic decrease in carrier concentration from 1.59 × 1021 to 5.0 × 1019 cm–3 at room temperature. The samples with In contents of 0.01 and 0.03 show a high power factor of about 1 mW m–1 K–2 at room temperature due to the optimization of the carrier concentration. Meanwhile, the excess Cu content and doping of In atoms also favor the formation of nanopores. These pores have strong interaction with phonons, leading to remarkable reduction in lattice thermal conductivity. Finally, a high ZT value of about 1.44 is achieved at 873 K in the Cu1.99In0.01Se (x = 0 and y = 0.01) sample, which is about twice that of the Cu-deficient sample (Cu1.7Se). Our work provides a viable insight into tuning vacancy defects to improve efficiently the electrical and thermal transport performance for copper-based thermoelectric materials.

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“…10 Such crystalline structure corresponds to the ideal phononglass electron-crystal model for high-efficiency TE materials. Besides, numerous types of synthesis methods have been applied in building copper selenide-based TE materials, [17][18][19][20][21][22][23][24][25][26][27][28][29][30] some of which were even constructed as FTE devices. 25,26 The morphology and TE performance of these copper selenides differ from each other to a certain degree under different synthesis conditions.…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis of copper selenides with different stoichiometric compositions and their thermoelectric performance at a low temperature range

Zhao

Shi

et al. 2021

RSC Adv.

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Enhanced thermoelectric performance of Cu2Se by tuning the aligned lamella microstructure

Cited by 12 publications

References 8 publications

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Synergetic Optimization of Electrical and Thermal Transport Properties by Cu Vacancies and Nanopores in Cu₂Se

Facile synthesis of copper selenides with different stoichiometric compositions and their thermoelectric performance at a low temperature range

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Enhanced thermoelectric performance of Cu2Se by tuning the aligned lamella microstructure

Cited by 12 publications

References 8 publications

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Synergetic Optimization of Electrical and Thermal Transport Properties by Cu Vacancies and Nanopores in Cu2Se

Facile synthesis of copper selenides with different stoichiometric compositions and their thermoelectric performance at a low temperature range

Contact Info

Product

Resources

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Synergetic Optimization of Electrical and Thermal Transport Properties by Cu Vacancies and Nanopores in Cu₂Se