2024
DOI: 10.1016/j.jallcom.2024.174028
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Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying

Yijun Ran,
Wenxue Ma,
Hailong Yu
et al.
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Cited by 4 publications
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“…18) In fact, Mg 3 Sb 2 -based bulk materials exhibit a high thermoelectric performance comparable to that of Bi 2 Te 3 -based materials, which were previously considered the best-performing materials at around RT. 19) Thin films of Mg 3 Sb 2 have also been extensively studied, 20,21) with a sputtered Mg 3 Sb 2 thin film exhibiting a power factor of about 0.11 μW cmK −2 . 22) It has also been reported that the power factor increases in thin films fabricated by MBE due to band convergence by strain control.…”
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confidence: 99%
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“…18) In fact, Mg 3 Sb 2 -based bulk materials exhibit a high thermoelectric performance comparable to that of Bi 2 Te 3 -based materials, which were previously considered the best-performing materials at around RT. 19) Thin films of Mg 3 Sb 2 have also been extensively studied, 20,21) with a sputtered Mg 3 Sb 2 thin film exhibiting a power factor of about 0.11 μW cmK −2 . 22) It has also been reported that the power factor increases in thin films fabricated by MBE due to band convergence by strain control.…”
mentioning
confidence: 99%
“…3. Figures 3(a) and 3(b) show the Seebeck coefficient (S) and power factor (S 2 σ) as a function of electrical conductivity (σ), where other reported values of Mg 3 Sb 2 thin films fabricated by MBE 24) or sputtering [20][21][22] are also plotted. The values in this study, indicated by the red circles on the graph, show notably higher S at the same σ compared to other Mg 3 Sb 2 thin films.…”
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