Enhanced thermoelectric performance of Ru2TiSi Heusler compounds with Ta substitution

Fujimoto, Takuya; Mikami, Masashi; Miyazaki, Hidetoshi; Nishino, Yoichi

doi:10.1016/j.jallcom.2023.172345

Journal of Alloys and Compounds

2023

DOI: 10.1016/j.jallcom.2023.172345

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Enhanced thermoelectric performance of Ru2TiSi Heusler compounds with Ta substitution

Takuya Fujimoto,

Masashi Mikami,

Hidetoshi Miyazaki

et al.

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2024

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Cited by 3 publications

References 38 publications

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Cooperative Nernst effect of multilayer systems: Parallel circuit model study

Matsuura,

Riss,

Garmroudi

et al. 2024

Phys. Rev. Research

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Transverse thermoelectric power generation has emerged as a topic of immense interest in recent years owing to the orthogonal geometry which enables better scalability and fabrication of devices. Here, we investigate the thickness dependence of longitudinal and transverse responses in film-substrate systems, i.e., the Seebeck coefficient, the Hall coefficient, the Nernst coefficient, and the anomalous Nernst coefficient in a unified and general manner based on the circuit model, which describes the system as the parallel setup. By solving the parallel circuit model, we show that the transverse responses exhibit a significant peak, indicating the importance of a cooperative effect between the film and the substrate, arising from circulating currents that occur in these multilayer systems in the presence of a temperature gradient. Finally, on the basis of realistic material parameters, we predict that the Nernst effect in bismuth thin films on doped silicon substrates is boosted to unprecedented values if the thickness ratio is tuned accordingly, motivating experimental validation. Published by the American Physical Society 2024

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Cooperative Nernst effect of multilayer systems: Parallel circuit model study

Matsuura,

Riss,

Garmroudi

et al. 2024

Phys. Rev. Research

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Semiconducting Heusler Compounds beyond the Slater-Pauling Rule

Parzer,

Garmroudi,

Riss

et al. 2024

PRX Energy

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Heusler compounds with semiconducting properties represent an important class of functional materials. Usually, research on these systems is guided by simple electron-counting rules, such as the Slater-Pauling principle. Here, we report on the discovery of Heusler-type semiconductors, significantly deviating from the Slater-Pauling rule. We theoretically predict the occurrence of nonmagnetic semiconducting ground states in various highly off-stoichiometric full-Heusler alloys, where self-substitution leads to a band-gap opening. This unexpected trend is confirmed experimentally by thermoelectric transport measurements on a multitude of Fe2−2xV1−xAl1+3x samples with up to 20% substitution of Fe and V atoms. The band-gap opening leads to an exceptionally large Seebeck coefficient in p-type Fe2VAl thermoelectrics, previously limited by bipolar conduction and low-density-of-states effective mass. Consequently, our work presents a paradigm to tune the band gap of Heusler compounds by self-substitution and introduces a hitherto unexplored class of semiconductors with exceptional thermoelectric properties, offering significant potential for advancements in energy science and sustainable-energy technologies. Published by the American Physical Society 2024

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Thermoelectric materials—Challenges, approaches and classes

Karthikeyan,

Prabhakaran,

Akilan

2024

Mater. Tech. Rep.

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Thermoelectric (TE) materials have gained significant attention in recent days for their ability to convert waste heat energy into electrical energy. Numerous advances in new and a unique thermoelectric materials have been developed during the last decades due to their ease of device fabrication technique and technology. Thermoelectric research has become a hotspot in materials science over the recent years due to its promising global necessity in energy generation, energy conservation and subsequent utilization. Here this article seeks to highlight some of the recent advances in thermoelectric research such as criteria for ideal TE materials, various strategies that are in practice to improve TE performance and different methodologies adopted in the preparation of TE-based materials. This article also highlights some of the explored state-of-art materials in thermoelectric research to layout a grid for future purposes.

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Enhanced thermoelectric performance of Ru2TiSi Heusler compounds with Ta substitution

Cited by 3 publications

References 38 publications

Cooperative Nernst effect of multilayer systems: Parallel circuit model study

Cooperative Nernst effect of multilayer systems: Parallel circuit model study

Semiconducting Heusler Compounds beyond the Slater-Pauling Rule

Thermoelectric materials—Challenges, approaches and classes

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