Enhanced Thermoelectric Performance of ZnO-Based Thin Films via Interface Engineering

Zhou, Zhifang; Zheng, Yunpeng; Yang, Yueyang; Zhang, Wenyu; Zou, Mingchu; Nan, Ce‐Wen; Lin, Yuanhua

doi:10.3390/cryst12101351

Cited by 9 publications

(10 citation statements)

References 35 publications

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“…Compared with as-deposited and as-annealed GZO thin films, the design of more ZnO/GZO interfaces brought large improvements by ∼32% and ∼15%, respectively. Furthermore, besides the excellent peak value of PF, O-ZnO/GZO also possessed a competitive average PF value of 262 μW m −1 K −2 in the temperature range from 300 to 623 K. The comparison with other n-type oxygen-containing thermoelectric materials from our previous work and references, including SrTiO 3 , 28 Bi 2 O 2 Se, 29 CaMnO 3 , 30 TiO 2 , 31 IGZO, 32 Bi 5.9 Zr 0.1 Cu 2 Se 3.6 Cl 0.4 O 6 , 33 and GZO-based thin films 13,16,17 could be found in Figure 4B. Therefore, constructing ZnO-GZO interfaces has been further proven as an effective method to optimize electrical properties from the point of weighted mobility in this work.…”

Section: Resultsmentioning

confidence: 89%

“…(A) Temperature‐dependent power factor (PF) of D‐ZnO/gallium‐doped zinc oxide (GZO), H‐ZnO/GZO, and O‐ZnO/GZO thin films (as deposited and as annealed GZO thin films were taken from our previous work 16,17 for comparison); (B) comparison of average power factor (PF ave ) value in the temperature ranges from 300 to 623 K for O‐ZnO/GZO thin film in this work and n‐type oxygen‐containing thermoelectric materials from our previous work and Refs. [13, 16, 17, 28–33]…”

Section: Resultsmentioning

confidence: 99%

“…Based F I G U R E 4 (A) Temperature-dependent power factor (PF) of D-ZnO/gallium-doped zinc oxide (GZO), H-ZnO/GZO, and O-ZnO/GZO thin films (as deposited and as annealed GZO thin films were taken from our previous work 16,17 for comparison); (B) comparison of average power factor (PF ave ) value in the temperature ranges from 300 to 623 K for O-ZnO/GZO thin film in this work and n-type oxygen-containing thermoelectric materials from our previous work and Refs. [13,16,17,[28][29][30][31][32][33] on the assumption of the single parabolic band mode and acoustic phonon scattering, we calculated the room temperature m d * of all the samples (Table 1). The correlations could be found elsewhere.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, the advantages over bulks such as light‐weight and small‐size prompt thin films more suitable to be used in microminiature electronics 11 . Considering the low cost, good chemical, and thermal stability as well as transparency, gallium‐doped zinc oxide (GZO) thin films have been widely investigated 12–15 . Our previous work indicated that constructing ZnO–GZO interfaces could effectively optimize the electrical properties of GZO thin films due to energy filtering effects that occurred at the interfaces 16,17 .…”

Section: Introductionmentioning

confidence: 99%

“…11 Considering the low cost, good chemical, and thermal stability as well as transparency, gallium-doped zinc oxide (GZO) thin films have been widely investigated. [12][13][14][15] Our previous work indicated that constructing ZnO-GZO interfaces could effectively optimize the electrical properties of GZO thin films due to energy filtering effects that occurred at the interfaces. 16,17 However, the designed structures only contained one ZnO layer and formed one or two ZnO-GZO interfaces.…”

Section: Introductionmentioning

confidence: 99%

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Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films

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As a transparent thermoelectric oxide, gallium‐doped zinc oxide (GZO) has the potential to power wearable or portable electronics and may be used in the integrated circuits industry for chip cooling. Constructing ZnO–GZO interfaces has been proposed as an effective strategy for improving thermoelectric performance of GZO thin films. However, without the aid of band structure calculation for multilayered films, it is hard to directly elucidate the underlying mechanisms of carrier transport. Weighted mobility is an indicator that reveals the inherent electronic transport properties like carrier scattering, electronic band structure, and so on. Thus, to further investigate the effects of ZnO–GZO interfaces on electrical properties of GZO thin films, the structures containing different numbers of ZnO–GZO interfaces were designed and the correlations among numbers of ZnO–GZO interfaces, weighted mobility, and electrical properties were explored. It was found that with more ZnO–GZO interfaces, the weighted mobility increased, and the power factor values also improved as well. Consequently, an enhanced power factor value reached 439 μW m−1 K−2 at 623 K. This work demonstrated the beneficial effects of multiple interfaces on the improvements of electrical transport performance through analyzing weighted mobility, which laid a foundation for further optimization of thermoelectric performance.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films

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Electrical Property Enhancement in Orientation‐Modulated Perovskite La‐Doped SrTiO₃ Thermoelectric Thin Films

Chen

Zhou

Yang

et al. 2023

Adv Funct Materials

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Thermoelectric oxide thin films are promising in chip cooling. The issues on the orientation of thin films are essential as they are related to the structures, morphologies, and thermoelectric properties. In this regard, the orientation modulation is conducted on La‐doped SrTiO3 thin films on (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) single crystal substrates. Layer‐by‐layer growth mode is found in (001)‐ and (110)‐ oriented thin films, resulting in few grain boundaries (GBs). In (111)‐oriented films, island growth mode leads to columnar grain boundaries that build up potential barriers for electrons to be strongly scattered and filtered, suppressing electron mobility and increasing effective mass. In addition, the GBs serve as oxygen vacancy diffusion paths when annealing, causing increased carrier concentration and lattice contraction. The weighted mobility of 71.9 cm2 V−1 s−1 and electrical conductivity of ≈600 S cm−1 are realized in the (001)‐oriented film at room temperature. Ultimately, outstanding power factor values of ≈569 µW m−1 K−2 (room temperature) and ≈791 µW m−1 K−2 (573 K) are successfully achieved, outperforming those in polycrystalline ceramics and (111)‐oriented films. This study systematically investigates the influence of grain boundaries and orientations on SrTiO3‐based thermoelectric films, which lays a solid foundation for improving thermoelectric performance in other oxide thin films.

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Ultralow Thermal Conductivity and Improved Thermoelectric Properties of Al‐Doped ZnO by In Situ O₂ Plasma Treatment

et al. 2023

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The thriving of Internet‐of‐Things and integrated wireless sensor networks has brought an unprecedented demand for sustainable micro‐Watt‐scale power supplies. Development of high‐performing micro‐thermoelectric generator (μ‐TEG) that can convert waste thermal energy into electricity and provide sustainable micro‐Watt‐scale power is therefore extremely timely and important. Herein, a significant advance in the development of earth‐abundant, nontoxic thermoelectric materials of aluminum‐doped zinc oxide (AZO) is presented. Through nanostructure engineering using a novel in situ O2 plasma treatment, AZO films are demonstrated with ultralow thermal conductivity of 0.16 W m−1 K−1 which is the lowest reported in the literature. This nanostructured film yields a power factor of 294 μW m−1 K−2 at 563 K and has resulted in a state‐of‐the‐art ZT of 0.11 at room temperature and 0.72 at 563 K for AZO thin films. Furthermore, the fabrication and testing of a prototype lateral μ‐TEG are reported based on the AZO thin film which achieves a power output of 1.08 nW with an applied temperature difference of 16.9 °C.

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Enhanced Thermoelectric Performance of ZnO-Based Thin Films via Interface Engineering

Cited by 9 publications

References 35 publications

Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films

Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films

Electrical Property Enhancement in Orientation‐Modulated Perovskite La‐Doped SrTiO₃ Thermoelectric Thin Films

Ultralow Thermal Conductivity and Improved Thermoelectric Properties of Al‐Doped ZnO by In Situ O₂ Plasma Treatment

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Enhanced Thermoelectric Performance of ZnO-Based Thin Films via Interface Engineering

Cited by 9 publications

References 35 publications

Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films

Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films

Electrical Property Enhancement in Orientation‐Modulated Perovskite La‐Doped SrTiO3 Thermoelectric Thin Films

Ultralow Thermal Conductivity and Improved Thermoelectric Properties of Al‐Doped ZnO by In Situ O2 Plasma Treatment

Contact Info

Product

Resources

About

Electrical Property Enhancement in Orientation‐Modulated Perovskite La‐Doped SrTiO₃ Thermoelectric Thin Films

Ultralow Thermal Conductivity and Improved Thermoelectric Properties of Al‐Doped ZnO by In Situ O₂ Plasma Treatment