2022
DOI: 10.1016/j.jmrt.2022.05.180
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Enhanced thermoelectric properties of InSe through simultaneous increase in electrical conductivity and Seebeck coefficient by Cl doping

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Cited by 6 publications
(2 citation statements)
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“…13 Lee et al used Cl doping in InSe to increase carrier concentration. 17 In addition, Li et al reported that substituting Se with group VII atoms can induce effective n-type doping in InSe nanosheets. 18…”
Section: Introductionmentioning
confidence: 99%
“…13 Lee et al used Cl doping in InSe to increase carrier concentration. 17 In addition, Li et al reported that substituting Se with group VII atoms can induce effective n-type doping in InSe nanosheets. 18…”
Section: Introductionmentioning
confidence: 99%
“…The TE efficiency is determined by the dimensionless figure of merit ZT = α 2 σ T/ κ, where α, σ, κ, and T denote the Seebeck coefficient, the electrical conductivity, the total thermal conductivity, and the absolute temperature, respectively. Generally, a larger power factor ( PF = α 2 σ) and a lower κ can achieve a higher ZT . In the recent two decades, various tactics have been implemented to modify the crystalline phases of TE materials to reduce their thermal conductivity while maintaining their high PF , such as nanostructuring, solid-solution alloying, defect engineering, and introducing multiscale defect centers. A radically different approach may be undertaken depending on the materials with intrinsically low κ, making the PF the parameter to be improved. …”
Section: Introductionmentioning
confidence: 99%