2013
DOI: 10.1021/cm402593f
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Enhanced Thermoelectric Properties of Variants of Tl9SbTe6 and Tl9BiTe6

Abstract: Tl9BiTe6, a substitution variant of Tl5Te3, is one of the leading midtemperature thermoelectrics and is postulated to exceed ZT = 1 above 450 K when prepared by zone-melting and reach ZT = 0.86 at 560 K after hot-pressing. We have prepared the isostructural series Tl9Sb1–x Te6, Tl9–x Sb1+x Te6, Tl9Bi1–x Te6, and Tl9–x Bi1+x Te6, with x ranging from 0 to 0.05, from the elements in the stoichiometric ratios and determined their thermoelectric properties after hot-pressing. In theory, these tellurides are narrow-… Show more

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Cited by 67 publications
(53 citation statements)
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“…As shown in Figure 2C,C sAg 5 Te 3 exhibits moderate power factors (PF = S 2 s)w ith the maximum value of 3.9 mWcm À1 K À2 at 727 K. This value is comparable to those of other thermoelectrics that possess intrinsically low total thermal conductivities (for example,3.9, 5.7, 6.7, 10.1, 8.2, and 12 mWcm À1 K À2 of Ag 9 TlTe 5, [20] Yb 14 MnSb 11, [21] Tl 9 BiTe 6 , [22] b axis of SnSe, [16] a-Cu 2Àx S, [13] and b-Cu 2Àx Se, [12] respectively).…”
Section: Angewandte Chemiesupporting
confidence: 56%
“…As shown in Figure 2C,C sAg 5 Te 3 exhibits moderate power factors (PF = S 2 s)w ith the maximum value of 3.9 mWcm À1 K À2 at 727 K. This value is comparable to those of other thermoelectrics that possess intrinsically low total thermal conductivities (for example,3.9, 5.7, 6.7, 10.1, 8.2, and 12 mWcm À1 K À2 of Ag 9 TlTe 5, [20] Yb 14 MnSb 11, [21] Tl 9 BiTe 6 , [22] b axis of SnSe, [16] a-Cu 2Àx S, [13] and b-Cu 2Àx Se, [12] respectively).…”
Section: Angewandte Chemiesupporting
confidence: 56%
“…Electronic structure calculations imply that as x increases in Tl 10Àx La x Te 6 , a transition from metallic (x = 0) to p-doped semiconducting (x < 1) then to n-doped semiconducting (x > 1) behavior is anticipated [16]. Actually, the above mentioned p-n transition has been demonstrated in Tl 9Àx Bi 1+x Te 6 [9]. In the cases studies here, a increases from a = +83 lV K À1 when x = 0.95 to a = +165 lV K À1 when x = 1.05 at 300 K. Even though the specimen with x = 1.05 is expected to be a n-type semiconductor, its positive sign of the Seebeck coefficient indicates hole conduction is dominant in the sample, probably due to defects in the structure, or possible due to small side products not observed in the X-ray diagram, which affect the Tl:La ratio of the main product.…”
Section: Thermoelectric Properties Of Tl 10àx La X Tementioning
confidence: 96%
“…More specifically, several ternary derivatives of Tl 5 Te 3 are promising as well, like Tl 9 (BinSb)Te 6 [8][9][10] and Tl 4 (SnnPb)Te 3 [11,12] reaching zT values in excess of 1 above 500 K. Another distinguished character of these compounds is their high average atomic masses, which will reduce the atomic vibration frequencies, thereby enabling a low lattice thermal conductivity. Notably, a lattice thermal conductivity below 0.4 W m À1 K À1 was determined in a zone-refined Tl 9 BiTe 6 [10].…”
Section: Introductionmentioning
confidence: 99%
“…Chalcogenides contain Group 15 elements have been drawing more and more attentions due to their structural diversity [1][2][3][4][5][6], and tremendous potential applications as nonlinear optics [7][8][9], thermoelectric device [10][11][12], ion exchange [13][14][15][16], and photocatalysis [17][18][19]. Thioarsenates(III), a subclass of chalcogenides, typically demonstrate a special structural feature of the stereochemically active 4s 2 lone pair electrons associated with As(III) [1,3].…”
Section: Introductionmentioning
confidence: 99%