Enhanced tunable properties of Bi1.5MgNb1.5O7 thin films grown on Pt–Si substrates using amorphous TiOx buffer layers

Yu, Shihui; Li, Lingxia; Sun, Zheng; Zheng, Haoran; Dong, Helei

doi:10.1016/j.matlet.2015.01.012

Cited by 11 publications

(2 citation statements)

References 13 publications

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“…The later strategy involves the second phase recombination, which mainly lowers the dielectric loss, and this strategy often consists the low loss oxides of magnesium and aluminum MgO, Al 2 O 3 , MgAl 2 O 4 , etc. In addition to these strategies, buffer and/or seed layer emplanting [5][6][7][8], thickness optimizing [9][10][11], and defect mitigating via atomic engineering [12] are also developed as strain modifying strategies to improve the dielectric tunable properties.…”

Section: Introductionmentioning

confidence: 99%

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

Peng

Wang

et al. 2022

Research

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Tunable devices constructed by ferroelectric thin films are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications, for example, resonators, filters, or phase shifters. However, it is difficult to simultaneously achieve these characteristics by traditional strategies, such as doping and strain modifying. Here, we demonstrate that the dielectric tunability of the sol-gel-prepared Pb(Sc1/2Nb1/2)0.9(Mg1/3Nb2/3)0.1O3 (PSNMN) thin film can be almost doubled from ~47% to ~80.0% (at 10 kHz) at a low electric field (~530 kV/cm), and the dielectric loss can be sharply reduced by more than an order of magnitude, from ~0.50 to ~0.037 (at 1 kHz) when the thin film was annealed in air at 650°C for 15 h under the help of an atmosphere-compensating-block (ACB) made from the proto-PSNMN gel. Moreover, the PSNMN thin film annealed with ACB also exhibited an extremely high thermally-stable dielectric tunability in an ultrabroad temperature range (>130 K), which could be attributed to the Maxwell-Wagner (MW) effect generated by the interface between the PSNMN disordered matrix and the B-site nanoscale-ordered structure formed during the long-term annealing process. The reduced dielectric loss is mainly benefited from the reduced concentration of oxygen vacancy and the possible MW effects, and the enhanced dielectric tunability could be ascribed to the weaker domain-pinning effect by oxygen vacancy. The breakthrough provides a new universal strategy to achieve utrahigh tunable performance in A(B’1/2B”1/2)O3 ferroelectric thin films with a B-site nanoscale-ordered structure, meanwhile it paves the way for ultraintergrated tunable thin-film-devices with great phase shifter performance in practical applications.

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Section: Introductionmentioning

confidence: 99%

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

Peng

Wang

et al. 2022

Research

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“…Low-loss, high-k and dielectric tunable materials have attracted much attention for their huge potential in potable communication device application. [1][2][3][4][5][6][7][8] In these kinds of materials, barium strontium titanate (Ba x Sr 1−x TiO 3 ,BST) has been intensively studied for many years as dielectric tunable thin film materials. BST thin films have a high dielectric constant and large tunability.…”

Section: Introductionmentioning

confidence: 99%

Effect of external electric field on crystalline structure and dielectric properties of Bi_1.5MgNb_1.5O₇ thin films*

Liu¹,

Gao²,

Liang³

et al. 2021

Chinese Phys. B

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Bismuth-based cubic pyrochlore materials have attractive dielectric properties, especially dielectric tunability. The Bi 1.5 MgNb 1.5 O 7 ceramic samples were prepared by solid state reaction. The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized, no second phase was found in the result. BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire. The BMN thin film has a high dielectric tunability of 43% at a bias voltage of 1.5 MV/cm, with loss tangent lower than 0.009. A Raman study of BMN cubic pyrochlore reveals O ′ -A-O ′ and O-A-O bending modes contribute to 80% of dielectric permittivity, obstructing these modes such as applying external electric field can have apparent influence on dielectric constant. Berry Phase calculation results shows that A 2 O ′ tetrahedrons are more easy to distort under an external field. The A-site Mg have the highest displacement (0.765028 Å), followed by A-site Bi cations (0.346317 Å). Compared to zero-bias thin film, the biased one with A-O and A-O ′ bonds being stretched and external coulomb force applied on cations and anions, the dielectric constant under bias field dramatically decreased.

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Effect of Co2+ substitutions on microstructure and dielectric properties of Bi1.5MgNb1.5O7 cubic pyrochlore

et al. 2022

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Enhanced tunable properties of Bi1.5MgNb1.5O7 thin films grown on Pt–Si substrates using amorphous TiOx buffer layers

Cited by 11 publications

References 13 publications

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

Effect of external electric field on crystalline structure and dielectric properties of Bi_1.5MgNb_1.5O₇ thin films*

Effect of Co2+ substitutions on microstructure and dielectric properties of Bi1.5MgNb1.5O7 cubic pyrochlore

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Enhanced tunable properties of Bi1.5MgNb1.5O7 thin films grown on Pt–Si substrates using amorphous TiOx buffer layers

Cited by 11 publications

References 13 publications

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

Effect of external electric field on crystalline structure and dielectric properties of Bi1.5MgNb1.5O7 thin films*

Effect of Co2+ substitutions on microstructure and dielectric properties of Bi1.5MgNb1.5O7 cubic pyrochlore

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Effect of external electric field on crystalline structure and dielectric properties of Bi_1.5MgNb_1.5O₇ thin films*