Enhanced tunnel magnetoresistance and electric-field effect in CoFeB/MgO/CoFeB perpendicular tunnel junctions with W underlayer

Kim, Dae-Hoon; Park, Kyung-Woong; Park, Byong‐Guk

doi:10.1016/j.cap.2017.04.003

Cited by 14 publications

(3 citation statements)

References 31 publications

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“…These results indicate that the highest M S after post-annealing was at 350 • C, which was the best heat-resistant temperature in this research. The oxidation of all CoFeW thin films on Si(100) substrate was better than those on glass substrate [24]. The results showed that the Ms of CoFeW films decreases obviously under various conditions.…”

Section: Magnetic Analysismentioning

confidence: 89%

“…In our previous research, the as-deposited and post-annealing glass/CoFeW were examined for their magnetic and crystallinity properties, as mentioned in Table 1 [23]. In this study, it was found that the thermal stability of Co 40 Fe 40 W 20 was about 350 • C. However, in order to apply a magnetic film in MRAM, the 400 • C of thermal tolerance is required for complementary metal-oxide-semiconductor (CMOS) and back-end-of-line (BEOL) process compatibility [22,24]. The thermal tolerance of Co 40 Fe 40 W 20 is less than 400 • C. CoFeW film can be used as an electrode and is compatible with the whole device on the substrate after annealing at 300 • C [25].…”

Section: Introductionmentioning

confidence: 99%

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Impact of Annealing on Magnetic Properties and Structure of Co40Fe40W20 Thin Films on Si(100) Substrate

et al. 2021

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Co40Fe40W20 monolayers of different thicknesses were deposited on Si(100) substrates by DC magnetron sputtering, with Co40Fe40W20 thicknesses from 10 to 50 nm. Co40Fe40W20 thin films were annealed at three conditions (as-deposited, 250 °C, and 350 °C) for 1 h. The structural and magnetic properties were then examined by X-ray diffraction (XRD), low-frequency alternative-current magnetic susceptibility (χac), and an alternating-gradient magnetometer (AGM). The XRD results showed that the CoFe (110) peak was located at 2θ = 44.6°, but the metal oxide peaks appeared at 2θ = 38.3, 47.6, 54.5, and 56.3°, corresponding to Fe2O3 (320), WO3 (002), Co2O3 (422), and Co2O3 (511), respectively. The saturation magnetization (Ms) was calculated from the slope of the magnetization (M) versus the CoFeW thickness. The Ms values calculated in this manner were 648, 876, 874, and 801 emu/cm3 at the as-deposited condition and post-annealing conditions at 250, 350, and 400 °C, respectively. The maximum MS was about 874 emu/cm3 at a thickness of 50 nm following annealing at 350 °C. It indicated that the MS and the χac values rose as the CoFeW thin films’ thickness increased. Owing to the thermal disturbance, the MS and χac values of CoFeW thin films after annealing at 350 °C were comparatively higher than at other annealing temperatures. More importantly, the Co40Fe40W20 films exhibited a good thermal stability. Therefore, replacing the magnetic layer with a CoFeW film improves thermal stability and is beneficial for electrode and strain gauge applications.

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Section: Magnetic Analysismentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Impact of Annealing on Magnetic Properties and Structure of Co40Fe40W20 Thin Films on Si(100) Substrate

et al. 2021

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“…A requirement for implementing SOT-MRAM is the realization of a heavymetal/ferromagnetic-metal bilayer for performing SOT-induced magnetization switching. Additionally, W-based MTJs have shown superior thermal stability than the ones grown on the standard Ta underlayer [11][12][13][14], allowing for improving the performance of spin-transfer torque MRAMs and magnetic field sensors.…”

Section: Introductionmentioning

confidence: 99%

Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications

Kaidatzis

Gopman

Bran

et al. 2019

Journal of Magnetism and Magnetic Materials

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We report on the static and dynamic magnetic properties of W/CoFeB/Ta/CoFeB/MgO stacks, where the CoFeB layer is split in two by a 0.3 nm-thick Ta "dusting" layer. A total CoFeB thickness between 1.2 and 2.4 nm is studied. Perpendicular magnetic anisotropy is obtained for thickness below 1.8 nm even at the as-deposited stacks, and it is enhanced after annealing. Saturation magnetization is 1520 (1440) kA/m before (after) annealing, increased compared to non-split CoFeB layers. Ferromagnetic resonance measurements show that high magnetic anisotropy energy may be achieved (effective anisotropy field 0.571±0.003 T), combined to a moderate Gilbert damping (0.030±0.001). We argue that the above characteristics make the split-CoFeB system advantageous for spintronics applications.

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Improved magnetic anisotropy of Co-based multilayer film with nitrogen dopant

Jia

et al. 2021

Rare Met.

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Enhanced tunnel magnetoresistance and electric-field effect in CoFeB/MgO/CoFeB perpendicular tunnel junctions with W underlayer

Cited by 14 publications

References 31 publications

Impact of Annealing on Magnetic Properties and Structure of Co40Fe40W20 Thin Films on Si(100) Substrate

Impact of Annealing on Magnetic Properties and Structure of Co40Fe40W20 Thin Films on Si(100) Substrate

Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications

Improved magnetic anisotropy of Co-based multilayer film with nitrogen dopant

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