Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kim, J.; Luo, B.; Mehandru, R.; Ren, F.; Lee, K. P.; Pearton, S. J.; Osinsky, A.; Norris, P.

doi:10.1063/1.1465119

Cited by 42 publications

(26 citation statements)

References 8 publications

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“…Our results are in line with the invoked decrease of forward voltage caused by short-term aging of InGaN LEDs reported in [21]. However, a detailed analysis revealed at least two comparable contributions to this effect, a decrease in series resistance and a decrease in characteristic tunnelling energy.…”

Section: Resultssupporting

confidence: 92%

“…The decrease in series resistance could be attributed to continuous annealing of the p cladding layer in the light-emitting structure. Such a post-fabrication self-annealing can result in a higher density of holes due to the instability of residual Mg-H complexes [21][22][23] and might be more pronounced in high-power LEDs operating at increased junction temperatures. However, the junction temperature of 350 K is too low to invoke conventional breakdown of the Mg-H complexes, which are known to dissociate at about 1000 K [24].…”

Section: Resultsmentioning

confidence: 99%

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Effect of long-term aging on series resistance and junction conductivity of high-power InGaN light-emitting diodes

Vaitonis¹,

Miasojedovas²,

Novičkovas³

et al. 2009

Lithuanian J. Phys.

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The forward voltage, series resistance, and junction conductivity of commercial high-power InGaN light-emitting diodes (LEDs) were investigated as a function of aging time. A gradual decrease of series resistance with a rate of about −1%/1000 h was revealed in InGaN LEDs within first ∼9,600 hours of aging under ordinary conditions (nominal forward current 350 mA, junction temperature 350 K), whereas the characteristic energy of tunnel injection exhibited a decrease with a rate of about −0.1%/1000 h. The observed aging effects were attributed to continuous post-fabrication self-annealing of the p-type cladding layer and to the variation of the localized-state density in the active layer of the LED chips.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Effect of long-term aging on series resistance and junction conductivity of high-power InGaN light-emitting diodes

Vaitonis¹,

Miasojedovas²,

Novičkovas³

et al. 2009

Lithuanian J. Phys.

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“…[8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] It was accepted that a significant reduction in the internal quantum efficiency of the LEDs resulted from a constant current stress. This degradation was characterized by the increase in the nonradiative recombination in the active junction of the LEDs due to the propagation of defects, 13,25,26 or caused by the migration of impurities or dopants in the multiple quantum well (MQW) region. In addition, operating at high temperature, GaN-based LEDs could have their optical properties significantly degraded.…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Yung

Liem

Choy

et al. 2011

Journal of Applied Physics

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Temperature-dependence of the internal efficiency droop in GaN-based diodes Appl. Phys. Lett. 99, 181127 (2011) Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes Appl. Phys. Lett. 99, 181116 (2011) Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electronblocking layer J. Appl. Phys. 110, 093104 (2011) A light emitting diode based photoelectrochemical screener for distributed combinatorial materials discovery Rev. Sci. Instrum. 82, 114101 (2011) Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop Appl. Phys. Lett. 99, 181115 (2011) Additional information on J. Appl. Phys. A unique degradation property of high power InGaN/GaN multiple quantum well (MQW) white light-emitting diodes (LEDs) was identified. The LEDs were stressed under different forwardcurrents. The various ageing characteristics were analyzed for both the electrical response and electro-luminescence (EL) spectra. The Raman spectroscopy allowed noninvasive probing of LED junction temperature profiles which correlated well with the EL characteristics, showing a junction temperature drop during degradation at certain current levels. In addition to the common observations: (1) a broadening of the light intensity-current (L-I) characteristic in the nonlinear regime, and (2) a shift of the current-voltage (I-V) dependence to higher current levels, the EL spectra showed different temperature responses of the two blue emission peaks, 440 and 463 nm. The former was temperature sensitive and thus related to shallow defect levels, while the latter was thermally stable and deeper defect states were involved in the degradation process. This unique selection rule resulted in the enhancement of the blue emission peak at 463 nm after degrading the LEDs. This study suggests that LED device heating is not directly linked to the degradation process.

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“…Although one should be careful when using such a method [8], this type of analysis has been applied to QW structures, either to assess the presence of defects [9] or to determine QW parameters [10]. The Arrhenius plot of the cutoff frequencies corresponding to the five RC series circuits, shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characterization of InGaN/GaN Multiple‐Quantum‐Well Structures by Thermal Admittance Spectroscopy

Nguyen

Schmeits

Germain

et al. 2002

phys. stat. sol. (c)

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Experimental results of electrical characterization of InGaN/GaN multiple-quantum-well electroluminescence test structures obtained by thermal admittance spectroscopy are presented. The studied GaN:Mg/5 × (InGaN/ GaN)/GaN:Si structures were grown on c-plane sapphire substrate by metal-organic vapor phase epitaxy. Admittance measurements were conducted from room temperature down to 125 K for a wide frequency range and for different applied bias voltages. Analysis of the capacitance versus frequency curves shows the presence of several cutoff frequencies which originate from the response of equivalent RC series circuits and give peaks in the conductance divided by angular frequency. The dependence of the position and the amplitude of these peaks on temperature is discussed.

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Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Cited by 42 publications

References 8 publications

Effect of long-term aging on series resistance and junction conductivity of high-power InGaN light-emitting diodes

Effect of long-term aging on series resistance and junction conductivity of high-power InGaN light-emitting diodes

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Electrical Characterization of InGaN/GaN Multiple‐Quantum‐Well Structures by Thermal Admittance Spectroscopy

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