Enhanced Two-Photon Absorption in a GaAs/AlAs Multilayer Cavity

Kanbara, Toshiyuki; Nakano, Shoya; Yano, Shinsuke; Morita, Ken; Kitada, Takahiro; Isu, Toshiro

doi:10.1143/jjap.48.04c105

Cited by 20 publications

(21 citation statements)

References 11 publications

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“…Then, the (001) GaAs substrate was thinned down to ∼20 µm by mechanical polishing and the remaining substrate was completely removed by selective wet etching using a citric acid-based etchant. 38) Pairs of the top, middle, and bottom DBRs were 28, 12.5, and 34, respectively. Figure 1 shows the schematic of the current-injection surface-emitting device.…”

Section: Device Fabricationmentioning

confidence: 98%

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Kitada

Minami

et al. 2018

Jpn. J. Appl. Phys.

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Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial wafers with (001) and (113)B orientations and they were directly bonded to form the coupled multilayer cavity. The (001) side cavity contains two types of InGaAs multiple quantum wells to realize optical gain for two-color lasing while a single GaAs layer of the (113)B side cavity is a nonlinear medium for efficient DFG. Lasing behavior was clearly observed for two modes under pulsed current conditions at room temperature. We found that the intensity relation between two-color lasings was dependent on the pulse duration because of the different temporal profiles of emission intensity. Simultaneous twocolor lasing in the device was also confirmed by measuring the sum-frequency generation signal using a beta barium borate crystal.

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Section: Device Fabricationmentioning

confidence: 98%

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Kitada

Minami

et al. 2018

Jpn. J. Appl. Phys.

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“…The two epiwafers were directly bonded at room temperature using the conventional surface-activated bonding method [30], [31], which is commonly used for the integration of two dissimilar semiconductor materials. After the bonding, the (001) GaAs substrate was completely removed by mechanical polishing and selective wet etching using a citric acid-based etchant [32] for the optical measurements and device fabrication. Figure 3 shows a cross-sectional image of the waferbonded coupled multilayer cavity observed by scanning electron microscopy (SEM).…”

Section: Design and Fabricationmentioning

confidence: 99%

Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

Kitada

Ota

et al. 2017

IEICE Trans. Electron.

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SUMMARYCompact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. Two cavity modes with an optical frequency difference in the terahertz region are realized since two cavities are coupled by the intermediate DBR multilayer. In the proposed device, one cavity is used as the active layer for two-color lasing in the near-infrared region by current injection and the other is used as the second-order nonlinear optical medium for difference-frequency generation of the two-color fundamental laser light. The control of the nonlinear polarization by face-to-face bonding of two epitaxial wafers with different orientations is quite effective to achieve bright terahertz emission from the coupled cavity. In this study, two-color emission by optical excitation was measured for the waferbonded GaAs/AlGaAs coupled multilayer cavity containing self-assembled InAs quantum dots (QDs). We found that optical loss at the bonding interface strongly affects the two-color emission characteristics when the bonding was performed in the middle of the intermediate DBR multilayer. The effect was almost eliminated when the bonding position was carefully chosen by considering electric field distributions of the two modes. We also fabricated the current-injection type devices using the wafer-bonded coupled multilayer cavities. An assemble of self-assembled QDs is considered to be desirable as the optical gain medium because of the discrete nature of the electronic states and the relatively wide gain spectrum due to the inhomogeneous size distribution. The gain was, however, insufficient for two-color lasing even when the nine QD layers were used. Substituting two types of InGaAs multiple quantum wells (MQWs) for the QDs, we were able to demonstrate two-color lasing of the device when the gain peaks of MQWs were tuned to the cavity modes by lowering the operating temperature.

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“…The remaining substrate was then completely removed by selective wet etching using a citric acid-based etchant. 28) Finally, the sample was dipped in a buffered hydrogen fluoride (BHF) solution to remove the oxide layer. Figure 3 shows the experimental setup for time-resolved FWM measurements using a femtosecond laser system with a 100 kHz repetition rate.…”

Section: Time-resolved Fwm Measurementsmentioning

confidence: 99%

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

Lu¹,

Ota²,

Kumagai³

et al. 2017

Jpn. J. Appl. Phys.

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We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω 1 , ω 2 , and ω 3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω 1 % ω 2 = ω 2 % ω 3 ) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω 1 and ω 2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω 3 (= 2ω 2 % ω 1 ) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

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Enhanced Two-Photon Absorption in a GaAs/AlAs Multilayer Cavity

Cited by 20 publications

References 11 publications

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

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