Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

“…30 The E g value of the undoped b-Ga 2 O 3 film is 4.91 eV by linear fitting, which is very close to a theoretical value of 4.9 eV. 6 In addition, according to our previous experimental results, b-Ga 2 O 3 prepared by RFMS shows high resistance and can be used as an insulating layer of LEDs, 15,31 providing potential conditions to innovatively fabricate highefficiency Au/i-Ga 2 O 3 /n-GaN diodes.…”

“…The increase in UV/DLE of the Au/i-Ga 2 O 3 /n-GaN diode can be attributed to the enhancement of radiative recombination of electrons and holes near the band edge energy levels due to improvement of the injection current. 15 Simultaneously, the deep level-related transitions decrease, causing the DLE to gradually saturate and making the UV emission dominant. Fig.…”

“…13,14 Encouragingly, b-Ga 2 O 3 can serve as an excellent candidate to improve the luminous efficiency of LEDs, due to that its large bandgap can be used to construct a wide bandgap insulator barrier. [15][16][17][18] For example, Lin et al prepared high-performance p-GaN/i-Ga 2 O 3 /n-Ga 2 O 3 :Si deep UV LEDs using i-Ga 2 O 3 as the active insulator layer, making the n-type layer have a higher bandgap energy in this n-i heterojunction. 19 However, the manufacturing process of PIN-type structural devices is complex and the cost is relatively expensive.…”