Enhancement and Broadening of the Internal Electric Field of Hole-Transport-Layer-Free Perovskite Solar Cells by Quantum Dot Interface Modification

Abstract

Hole-transport-layer-free perovskite solar cells have attracted strong interest due to their simple structure and low cost, but charge recombination is serious. Built-in electric field engineering is an intrinsic driver to facilitate charge separation transport and improve the efficiency of photovoltaic devices. However, the enhancement of the built-in electric field strength is often accompanied by the narrowing of the space charge region, which becomes a key constraint to the performance improvement of the device. Here, we propose an effective regulation method, the component engineering of quantum dots, to enhance the strength of the built-in electric field and broaden the range of space charge. By using all inorganic CsPbBr x I 3−x (x = 0, 1, 2, 3) quantum dot interface modification to passivate the defects of MAPbI 3 perovskite films, the regulation law of quantum dot components on the work function of perovskite films was revealed, and the mechanism of their influence on the internal electric field intensity and space charge region distribution was further clarified, thereby fundamentally solving the serious problem of charge recombination. As directly observed by electron-beam-induced current (EBIC), the introduction of CsPbBr 2 I quantum dots can effectively enhance the interfacial electric field intensity, widening the space charge region from 160 to 430 nm. Moreover, the efficiency of the hole-free transport layer perovskite solar cells modified by CsPbBr 2 I quantum dots was also significantly enhanced by 1.5 times. This is an important guideline for electric field modulation and efficiency improvement within photovoltaic devices with other simplified structures.