Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Kundrotas, J.; Čerškus, Aurimas; Liberis, J.; Matulionis, A.; Leach, J. H.; Morkoç, A.H.

doi:10.12693/aphyspola.119.173

“…Similar effects were observed in Si-doped n + /n-GaAs homojunction structures [19], Si δ-doped GaAs structures [20], in selectively Sidoped GaAs/AlGaAs heterostructures [21] as well as in AlInN/GaN heterostructures [22]. Theoretical calculations show that a strong electric field is induced in all of these structures at the interface side of the active layer.…”

Section: Discussionsupporting

confidence: 65%

Photoluminescence lifetimes in GaAs/Al0.3Ga0.7As structures designed for microwave and terahertz detectors

Čerškus¹,

Kundrotas²,

Nargelienė³

et al. 2013

Lith. J. Phys.

0

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This paper presents the photoluminescence spectra and light emission lifetimes in GaAs/Al 0.3 Ga 0.7 As structures designed for microwave and terahertz detectors. The photoluminescence and light emission lifetimes were investigated both before and after etching of the cap-layers, and possible mechanisms of carrier recombination are discussed. The characteristic time of the free exciton emission corresponds to 0.5 ns at a temperature of 3.6 K. The recombination lifetime of the free electron acceptor was measured to be 22-25 ns in GaAs structures and 4-15 ns in AlGaAs structures. The emission lifetime of deep Si level having 170 meV activation energy in AlGaAs layer was found to be equal to 40 ns. The excitonic photoluminescence maxima of n + /n-GaAs and n + /n-Al 0.3 Ga 0.7 As homojunction structures in comparison to n-GaAs and n-Al 0.3 Ga 0.7 As were shifted by approximately 200 ps. This suggested that the drift of free carriers is important in the formation of free excitons in n-GaAs and n-Al 0.3 Ga 0.7 As layers.

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“…Two phenomena were ob served: (i) the amplification and (ii) the narrowing of the excitonic line in the n + /iGaAs homojunc tion. Similar effects were observed in Si δdoped GaAs structures [72], in the selectively Sidoped GaAs/AlGaAs heterostructures [60] and also in the AlInN/GaN heterostructures [73]. A high electric field forms at the interfaces from the active layer side in all these structures.…”

Section: The Enhancement Of Pl In Semiconductor Homo-and Heterojunctionssupporting

confidence: 69%

Enhanced light emission in nanostructures

Kundrotas¹,

Čerškus²,

Nargelienė³

et al. 2011

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The enhancement of light emissive processes in different quantum nanometric systems is presented in this review. The plasmonic enhanced photoluminescence (fluorescence) of metals and metal nanoparticles, molecules and semiconductor nanostructures, as well as surface-enhanced Raman scattering is initially considered. The enhancement of excitonic photoluminescence intensity in semiconductor confined systems such as quantum wells, quantum wires and quantum dots, and microcavities are then discussed. Finally, the experimental results of the enhanced exciton photoluminescence from GaAs homojunctions, δ-doped GaAs structures, GaAs/AlGaAs selectively doped and AlInN/GaN heterostuctures is presented. These results can be applied to enhance the emission of light-emitting diodes, as well as to increase the efficiency of solar cells.

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Photoluminescence lifetimes in GaAs/Al0.3Ga0.7As structures designed for microwave and terahertz detectors

Čerškus¹,

Kundrotas²,

Nargelienė³

et al. 2013

Lith. J. Phys.

0

View full text Add to dashboard Cite

This paper presents the photoluminescence spectra and light emission lifetimes in GaAs/Al 0.3 Ga 0.7 As structures designed for microwave and terahertz detectors. The photoluminescence and light emission lifetimes were investigated both before and after etching of the cap-layers, and possible mechanisms of carrier recombination are discussed. The characteristic time of the free exciton emission corresponds to 0.5 ns at a temperature of 3.6 K. The recombination lifetime of the free electron acceptor was measured to be 22-25 ns in GaAs structures and 4-15 ns in AlGaAs structures. The emission lifetime of deep Si level having 170 meV activation energy in AlGaAs layer was found to be equal to 40 ns. The excitonic photoluminescence maxima of n + /n-GaAs and n + /n-Al 0.3 Ga 0.7 As homojunction structures in comparison to n-GaAs and n-Al 0.3 Ga 0.7 As were shifted by approximately 200 ps. This suggested that the drift of free carriers is important in the formation of free excitons in n-GaAs and n-Al 0.3 Ga 0.7 As layers.

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Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Cited by 3 publications

References 37 publications

Photoluminescence lifetimes in GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As structures designed for microwave and terahertz detectors

Photoluminescence lifetimes in GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As structures designed for microwave and terahertz detectors

Enhanced light emission in nanostructures

Photoluminescence lifetimes in GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As structures designed for microwave and terahertz detectors

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