Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing

Zeng, Yuheng; Chen, Jiahe; Ma, Miangyang; Wang, Weiyan; Yang, Deren

doi:10.1016/j.jcrysgro.2009.03.048

Cited by 2 publications

(1 citation statement)

References 27 publications

(37 reference statements)

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“…It was believed that nitrogen doping could be an effective pathway for heavily P-doped CZ-Si to enhance oxygen precipitation, thus, increasing the internal gettering capability. Moreover, the nitrogen doping showed an enhancement effect on oxygen precipitation during the prolonged annealing with a rapid thermal processing pretreatment [12]. In nitrogen-doped crystals, the total amount of vacancies composing the voids increased during the crystal growth halt.…”

Section: Introductionmentioning

confidence: 99%

Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon

Sun,

Lou,

et al. 2023

Coatings

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We investigated the effect of nitrogen doping on the pulling rate range of defect-free crystal in silicon with a diameter of 200 mm. It was found that the pulling rate range of defect-free crystal in nitrogen-doped Czochralski silicon is wider and the pulling rate (defect free) is lower than it is in non-nitrogen-doped Czochralski silicon. Under the experiment, the pull rate was from 0.67 mm/min~0.58 mm/min to 0.65 mm/min~0.54 mm/min. To further confirm the above experimental analysis, a numerical simulation process of nitrogen-doped Czochralski and non-nitrogen-doped Czochralski in an industrial system was performed. The V/G value along the S/L interface was the same for both models, but the distribution of Cvi (concentration of vacancy–concentration of self-interstitial) for nitrogen-doped Czochralski crystal silicon was more uniform and flat in a nitrogen-doped single crystal. Furthermore, the nitrogen-doped Czochralski crystal silicon had a smaller void size and a higher oxygen precipitation density. The experimental results are in good agreement with the numerical simulation results.

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Section: Introductionmentioning

confidence: 99%

Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon

Sun,

Lou,

et al. 2023

Coatings

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Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon

Chen

et al. 2010

Journal of Applied Physics

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The effect of vacancies introduced by rapid thermal annealing (RTA) on the oxygen precipitation in germanium-doped Czochralski (GCZ) silicon has been investigated. GCZ silicon is annealed at 650–1050 °C to facilitate the precipitation of oxygen. It is observed that the oxygen precipitation in silicon is enhanced by both the vacancies introduced during RTA pretreatment and the doping of germanium. Especially, we find that the enhancement effect of vacancies on the precipitation of oxygen is larger than that of germanium atoms. In contrast to non-RTA pretreatments, RTA pretreatments lead to less significant oxygen precipitation in GCZ silicon than in conventional Czochralski (CZ) silicon at temperatures ranging from 850 to 950 °C. The mechanism for the interaction between vacancies and germanium atoms in CZ silicon is elucidated.

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Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing

Cited by 2 publications

References 27 publications

Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon

Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon

Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon

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