Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well Structures

Hayakawa, Tetsuo; Takahashi, Kosei; Kondo, M.; Suyama, Takahito; Yamamoto, Saburo; Hijikata, Toshiki

doi:10.1103/physrevlett.60.349

Cited by 115 publications

(20 citation statements)

References 22 publications

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“…In the calculation of absorption coefficient, the Lorentzian broadening factors half-width-half-maximum (HWHM) are extracted from experimental data [16], [17]. The HWHM of the heavy hole (HH) and the light hole (LH) are considered to be the same and have a value of 3 meV which is averaged from the values taken from [16] and [17].…”

Section: Resultsmentioning

confidence: 99%

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Interdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation

Choy

1998

IEEE J. Quantum Electron.

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Abstract-This is a theoretical study of the effects of two asgrown structural parameters on the modulation properties of Al x Ga 10x As-GaAs quantum wells (QW's), which are the Al concentration in barrier and the thickness of the well layer serving as initial conditions before interdiffusion. The results show that, with a larger Al concentration and a wider well width, the range of interdiffusion for an enhanced electroabsorption (EA) change increases with both of these parameters, while insertion loss increases with the former and decreases with the latter. However, the increase in loss is lower than that of the rectangular QW for the same magnitude of absorption change. The range of a tunable absorption-peak wavelength produced by interdiffussion increases with increasing Al concentration and decreases with increasing well width. Moreover, in a moderately interdiffused QW, the required bias reduces for the same level of EA modulation. For the best device operation, interdiffused QW's with the Al concentration between 0.3 and 0.4 and well width between 10 and 12 nm are most suitable for developing a general-purpose electroabsorptive modulator. When applied in high-speed modulators, the EA of a wide and shallow QW active-region structure can be further enhanced by the use of corresponding interdiffusion.Index Terms-Diffusion process, electroabsorption, intermixing quantum well, modeling, optical materials/devices, quantumconfined Stark effect, quantum-well devices, tunable devices.

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Section: Resultsmentioning

confidence: 99%

“…The HWHM of the heavy hole (HH) and the light hole (LH) are considered to be the same and have a value of 3 meV which is averaged from the values taken from [16] and [17]. It should be noted that although interdiffusion will enhance the broadening factor [18], its relation is not well known and is therefore considered to be a constant here.…”

Section: Resultsmentioning

confidence: 99%

Interdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation

Choy

1998

IEEE J. Quantum Electron.

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“…[2][3][4][5] An enhancement of optical transition in QWs grown on ͑111͒B substrates and thus a reduced threshold current density of laser diode have been demonstrated. 6,7 Also, improved electron mobility in Sidoped ͑111͒B AlGaAs has been observed. 8 Similar advantages have also been reported for heterostructures grown on ͑111͒A substrates.…”

Section: Introductionmentioning

confidence: 89%

Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

Mei

Karunasiri

et al. 2005

Journal of Applied Physics

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A p-type GaAs∕AlGaAs multi-quantum-well infrared photodetector (QWIP) was fabricated on a GaAs (111)A substrate by molecular-beam epitaxy using silicon as dopant. The same structure was also grown on a GaAs (100) wafer simultaneously to compare the material and structural properties. It was found that Si acts as a p-type dopant in the GaAs (111)A sample while it is n-type in the GaAs (100) counterpart. The growth rate was found to be appreciably enhanced for GaAs (111)A compared with that of GaAs (100) orientation, while the Al composition in the barriers was found to be 20% smaller for a (111) orientation which results in a smaller barrier height. A peak responsivity of 1mA∕W with a relatively wide wavelength response (Δλ∕λp∼53%) was observed for the GaAs (111)A QWIP, mainly due to the location of the excited state far above the barrier. The photoresponse also showed a relatively strong normal incident absorption probably originating from the mixing of the conduction and valence Bloch states. The optimization of the quantum well parameters should further enhance the responsivity of this p-type QWIP with Si as dopant species.

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“…However, investigations on non-(1 0 0) plane materials, e.g., Refs. [2,3], also show interest due to the effects of altering the fundamental material properties, growth mechanism, surface kinetics and impurity incorporation in non-(1 0 0) plane. Challenges exist in growing high quality material on non-(1 0 0) substrates because of more dangling bonds available in the (1 1 1) surface which reduce the surface migration velocity of adatoms and incorporate more defects during material growth.…”

Section: Introductionmentioning

confidence: 97%

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate

Mei

Karunasiri

et al. 2007

Infrared Physics & Technology

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Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well Structures

Cited by 115 publications

References 22 publications

Interdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation

Interdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation

Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate

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