Enhancement in optoelectrical properties of polycrystalline ZnO thin films by Ar plasma

Dao, Hoa T.; Makino, Hisao

doi:10.1016/j.mssp.2019.02.026

Cited by 10 publications

(6 citation statements)

References 46 publications

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“…The peak observed at approximately 380 nm was due to the near-band-edge (NBE) emission of the ZnO thin films, which was attributed to the recombination of the free excitons. 30 However, the origin of the peaks observed at approximately 420 nm and 425 nm was unclear. To determine the origin of these peaks, we fitted the PL spectra of the ZnO thin films by using Gaussian functions, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Crystallization of ZnO thin films without polymer substrate deformation via thermal dissipation annealing method for next generation wearable devices

Kim

2021

RSC Adv.

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Section: Resultsmentioning

confidence: 99%

Crystallization of ZnO thin films without polymer substrate deformation via thermal dissipation annealing method for next generation wearable devices

Kim

2021

RSC Adv.

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“…Theoretically, the narrower the band gap, the easier it is to generate carriers, which has a higher photocatalytic degradation efficiency. The possible reason is that hydrogen acts as a shallow donor in ZnO, leading to a reduced band gap [30].…”

Section: Photocatalytic Degradation Kineticsmentioning

confidence: 99%

“…Photocatalytic performance of ZnO depends on the modification conditions and methods [29]. Dao et al [30] modified ZnO thin films by Ar plasma, and etching was observed on the surface. The grains on the surface were etched out, leading to a flatter surface with a smaller roughness.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Photocatalytic Activity of ZnO Nanoparticles in a Circulating Fluidized Bed with Plasma Jets

Huang

Hong

et al. 2021

Catalysts

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In this work, zinc oxide (ZnO) nanoparticles were modified in a circulating fluidized bed through argon and hydrogen (Ar–H) alternating-current (AC) arc plasma, which shows the characteristics of nonequilibrium and equilibrium plasma at the same time. In addition, a circulating fluidized bed with two plasma jets was used for cyclic processing. The catalytic degradation performance on Rhodamine B (Rh B) by Ar–H plasma-modified ZnO and pure ZnO was tested in aqueous media to identify the significant role of hydrogen atoms in Rh B degradation mechanism. Meanwhile, the effects of plasma treatment time on the morphology, size and photocatalytic performance of ZnO were also investigated. The results demonstrated that ZnO after 120-min treatment by Ar–H plasma showed Rh B photocatalytic degradation rate of 20 times greater than that of pure ZnO and the reaction follows a first kinetics for the Rh B degradation process. Furthermore, the photocatalyst cycle experiment curve exhibited that the modified ZnO still displays optimum photocatalytic activity after five cycles of experiment. The improvement of photocatalytic activity and luminescence performance attributes to the significant increase in the surface area, and the introduction of hydrogen atoms on the surface also could enhance the time of carrier existence where the hydrogen atoms act as shallow donors.

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“…Some studies attributed the enhancement and broadening of PL to the increase of bound excitons due to the introduction of H-related recombination centers . Meanwhile, Ar plasma treatment, which does not introduce H-related impurity, also achieves the enhancement and broadening up to 160 meV . Li et al claimed the broadening observed in PL is related to roughness on the surface .…”

Section: Introductionmentioning

confidence: 99%

Asymmetric Broadening and Enhanced Photoluminescence Emission in ZnO Due to Electron–Phonon Coupling

Wang

Ling

et al. 2022

J. Phys. Chem. C

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The ultraviolet emission of ZnO has great advantages for realizing applications in optoelectronics. Recent efforts to enhance their photoluminescence (PL) intensity have a profound importance to device efficiency. Enhanced PL spectra are always accompanied by large asymmetric broadening, and the recombination mechanism remains unclear. In this paper, the emission of ZnO thin films is enhanced by Ar and H2 plasma treatments, showing an increase of 30-fold in the intensity and 4-fold in the full width at half-maximum (FWHM). The systematic time-resolved photoluminescence measurements illustrate an extraordinary recombination mechanism, as a wide range of photon energies possess identical dynamic features and temperature-dependent characteristics. The asymmetric broadening is attributed to strong electron–phonon coupling introduced by the variation of carrier distribution. As a theoretical confirmation, the multimode Brownian oscillator (MBO) model is used to quantitatively describe the line shape of spectra with a perfect agreement and evaluates the coupling strength between the primary oscillator and LO phonon. The recombination mechanism of enhanced and broadened PL spectrum is applicable to other materials with strong phonon interaction, which will be beneficial to improving the performance of optoelectronic devices.

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Enhancement in optoelectrical properties of polycrystalline ZnO thin films by Ar plasma

Cited by 10 publications

References 46 publications

Crystallization of ZnO thin films without polymer substrate deformation via thermal dissipation annealing method for next generation wearable devices

Crystallization of ZnO thin films without polymer substrate deformation via thermal dissipation annealing method for next generation wearable devices

Enhancing Photocatalytic Activity of ZnO Nanoparticles in a Circulating Fluidized Bed with Plasma Jets

Asymmetric Broadening and Enhanced Photoluminescence Emission in ZnO Due to Electron–Phonon Coupling

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