Enhancement in the efficiency of Sb2Se3 solar cells by adding low lattice mismatch CuSbSe2 hole transport layer

Cang, Qingfei; Guo, Huafei; Jia, Xuguang; Ning, Huan; Ma, Changhao; Zhang, Jiayi; Yuan, Ningyi; Ding, Jianning

doi:10.1016/j.solener.2020.02.008

Cited by 35 publications

(20 citation statements)

References 29 publications

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“…In another approach, CuSbSe 2 layer has been sucessfully used as HTL in planar Sb 2 Se 3 solar cells. [130] The CuSbSe 2 layer exhibited two orders of magnitude higher carrier concentration than the Sb 2 Se 3 layer, leading to an improvement of V OC . More specifically, Liu et al prepared a tungsten oxide (WO 3−x ) films using a facile solution-processing method and then applied it as HTL in superstrate n-i-p Sb 2 Se 3 solar cells.…”

Section: Organic Hole Transporting Materialsmentioning

confidence: 98%

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Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

et al. 2021

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Antimony chalcogenides, including Sb 2 S 3 , Sb 2 Se 3 , and Sb 2 (S,Se) 3 , have been developed as attractive non-toxic and earth-abundant solar absorber candidates among the thin-film photovoltaic devices. Presently, a record certified power conversion efficiency of 10.5% has been demonstrated for antimony chalcogenide solar cells, which is significantly lower than that of Cu 2 (In,Ga)Se 2 (23.35%) and CdTe (22.1%) thin-film solar cells. The inferior performance in antimony chalcogenide solar cells is mainly owing to a large open-circuit voltage (V OC ) deficit resulted from the defect and interface-assisted recombination. Herein, a comprehensive review on the recent advancements interface band alignment and defect passivation are carried out. This review will provide a solid understanding on the interfaces and defects of antimony chalcogenide solar cells, which is beneficial to the research and development of such kind of solar cells.

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Section: Organic Hole Transporting Materialsmentioning

confidence: 98%

Section: Band Alignment Optimizationmentioning

confidence: 99%

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

et al. 2021

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“…The cosputtering method can also provide a simultaneous one-step process with controllable composition of the thin films without involving the highly toxic and explosive chemical nature of the post-selenization process in the use of expensive equipment. Only a few studies have reported on the fabrication and characterization of CuSbSe 2 thin films using the cosputtering method with Cu 2 Se/Sb 2 Se 3 and Cu/Sb 2 Se 3 target combinations [9,21,22]. The focus of this study was on the phases and the evolution of orientation of CuSbSe 2 thin films deposited using a radio frequency (RF) magnetron cosputtering system directly with CuSe 2 and Sb targets, while CuSe 2 generally has a cubic and orthorhombic structure that incongruently melts at 347 • C, forming CuSe and a Se-rich liquid [23].…”

Section: Introductionmentioning

confidence: 99%

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Kim

2020

Coatings

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When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

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“…55 Second, the lattice mismatch (see eq 2 , where ε stands for the mismatch and a i is the lattice parameter of each layer) of the MoSe 2 /Sb 2 Se 3 interface is significantly smaller (8%) than that of Mo/Sb 2 Se 3 (26%) when both the substrate and layer are oriented in the c direction; see the lattice constants and mismatch in Table S3 . 56 − 58 This indicates that the strain between MoSe 2 and Sb 2 Se 3 layers with the preferred crystalline orientation is lower than that of the Mo/Sb 2 Se 3 system, which may contribute to a more ordered ribbon growth in the first case. Also, a mismatch larger than 20% inevitably implies the formation of incoherent interfaces, while for ε < 10%, the system may be strained but leads to coherent interfaces.…”

Section: Resultsmentioning

confidence: 99%

Does Sb₂Se₃ Admit Nonstoichiometric Conditions? How Modifying the Overall Se Content Affects the Structural, Optical, and Optoelectronic Properties of Sb₂Se₃ Thin Films

Cano

Vidal-Fuentes

Calvo‐Barrio

et al. 2022

ACS Appl. Mater. Interfaces

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Sb 2 Se 3 is a quasi-one-dimensional (1D) semiconductor, which has shown great promise in photovoltaics. However, its performance is currently limited by a high V oc deficit. Therefore, it is necessary to explore new strategies to minimize the formation of intrinsic defects and thus unlock the absorber’s whole potential. It has been reported that tuning the Se/Sb relative content could enable a selective control of the defects. Furthermore, recent experimental evidence has shown that moderate Se excess enhances the photovoltaic performance; however, it is not yet clear whether this excess has been incorporated into the structure. In this work, a series of Sb 2 Se 3 thin films have been prepared imposing different nominal compositions (from Sb-rich to Se-rich) and then have been thoroughly characterized using compositional, structural, and optical analysis techniques. Hence, it is shown that Sb 2 Se 3 does not allow an extended range of nonstoichiometric conditions. Instead, any Sb or Se excesses are compensated in the form of secondary phases. Also, a correlation has been found between operating under Se-rich conditions and an improvement in the crystalline orientation, which is likely related to the formation of a MoSe 2 phase in the back interface. Finally, this study shows new utilities of Raman, X-ray diffraction, and photothermal deflection spectroscopy combination techniques to examine the structural properties of Sb 2 Se 3 , especially how well-oriented the material is.

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Enhancement in the efficiency of Sb2Se3 solar cells by adding low lattice mismatch CuSbSe2 hole transport layer

Cited by 35 publications

References 29 publications

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Does Sb₂Se₃ Admit Nonstoichiometric Conditions? How Modifying the Overall Se Content Affects the Structural, Optical, and Optoelectronic Properties of Sb₂Se₃ Thin Films

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Enhancement in the efficiency of Sb2Se3 solar cells by adding low lattice mismatch CuSbSe2 hole transport layer

Cited by 35 publications

References 29 publications

Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Does Sb2Se3 Admit Nonstoichiometric Conditions? How Modifying the Overall Se Content Affects the Structural, Optical, and Optoelectronic Properties of Sb2Se3 Thin Films

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Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Does Sb₂Se₃ Admit Nonstoichiometric Conditions? How Modifying the Overall Se Content Affects the Structural, Optical, and Optoelectronic Properties of Sb₂Se₃ Thin Films