Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique

Ghanwat, Vishvanath B.; Mali, Sawanta S.; Bagade, Chaitali S.; Khot, Kishorkumar V.; Desai, N. B.; Hong, Chang Kook; Bhosale, Popatrao N.

doi:10.1007/s10854-018-8896-4

Cited by 9 publications

(9 citation statements)

References 33 publications

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“…All of which are good for reducing lattice thermal conductivity. The SAED pattern, corresponding to (105), (220) planes of Cu 3 SbSe 4 , and (111), (220) planes of Cu 2 Se, which may be further supposed the as-prepared sample is consisted of Cu 3 SbSe 4 and Cu 2 − x Se [52][53][54].…”

Section: Resultsmentioning

confidence: 89%

“…It can be seen that they are p-type conductivity derived from the positive values of S, and the charge carriers in these compounds are holes. After Bi doping, the S rst decreases and then rises with increasing temperature, achieving a minimum S, which should be attributed to the α-β phase transition of Cu 2 − x Se phase [52,53].…”

Section: Resultsmentioning

confidence: 98%

“…4b, a crossed fringe, with interplanar spacing values of 0.5164 nm, which can be indexed to (101) planes of Cu 3 SbSe 4 [40]. The 0.2986 nm, 0.1041 nm and 0.1157 nm of spacing are in response to (200), (511) and (422) plane of Cu 2 Se, respectively [53]. It can be seen that some amorphous phases exist in the matrix (yellow A presents amorphous phase and C presents crystallized phase).…”

Section: Resultsmentioning

confidence: 99%

“…The heat-carrying acoustic phonons can be blocked by softening the chemical bonding interaction in crystal due to the expansion of unit cell [46]. Furthermore, the impurity phase Cu 2 Se and amorphous phase with extremely low κ lat can also decrease κ lat of Bi-doped Cu 3 SbSe 4 [52,53]. Consequently, the reduction of κ tot should be attributted to the depressed κ lat caused by the strengthened phonon scattering of multiscale defects involving point defects, nanoprecipitates, amorphous phases and grain boundaries [62,63].…”

Section: Resultsmentioning

confidence: 99%

“…SbSe 4 to some degree[52,53].XPS is used to check the valence state of elements and chemical composition of the Cu 3 SbSe 4 -based samples [54]. The experimental data of XPS spectra peaks of Cu 3 Sb 0.985 Bi 0.015 Se 4 samples are presented in Fig.…”

mentioning

confidence: 99%

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Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

Zhao

Wang

Yang

et al. 2021

J Mater Sci: Mater Electron

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Cu 3 SbSe 4 , featuring its earth-abundant, cheap, nontoxic and environmentally-friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material.Herein, a series of p-type Bi-doped Cu 3 Sb 1 − x Bi x Se 4 (x = 0-0.04) samples were fabricated through melting and hot pressing (HP) process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bidoped samples consist of Cu 3 SbSe 4 and Cu 2 − x Se impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coe cient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWcm − 1 K − 2 at 673 K for the Cu 3 Sb 0.985 Bi 0.015 Se 4 sample. Additionally, the multiscale defects of Cu 3 SbSe 4 -based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κ lat ), resulting in a low κ lat of ~ 0.53 Wm − 1 K − 1 and thermal conductivity (κ tot ) of ~ 0.62 Wm − 1 K − 1 at 673 K for the Cu 3 Sb 0.98 Bi 0.02 Se 4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu 3 Sb 0.985 Bi 0.015 Se 4 sample, which is ~ 1.9 times more than that of pristine Cu 3 SbSe 4 . This work shows that isovalent heavy-element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 98%