2014
DOI: 10.1002/pssb.201451317
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Enhancement in thermoelectric power of Ce(Ni1−xCux)2Al3: An implication of two‐band conduction

Abstract: The thermoelectric power (TEP), resistivity, and heat capacity of the polycrystalline Ce(Ni 1Àx Cu x ) 2 Al 3 system, for x ¼ 0.0-0.4, are reported. A clear enhancement of TEP at low temperatures is seen upon substitution of Cu and is expected to be useful for low-temperature thermoelectric applications. To understand such an enhanced TEP we have employed a twoband model based on the Ce-4f and conduction bands proposed by Gottwick et al. A clear evolution of a 4f band moving toward the Fermi level that is beco… Show more

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Cited by 5 publications
(7 citation statements)
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“…191). After X-ray diffraction and EDAX analysis it can be determined that the content of the impurity CeAl 2 phase is about 2%, as in previous studies [8] (Fig. 1).…”
Section: Experimental and Computational Detailssupporting
confidence: 73%
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“…191). After X-ray diffraction and EDAX analysis it can be determined that the content of the impurity CeAl 2 phase is about 2%, as in previous studies [8] (Fig. 1).…”
Section: Experimental and Computational Detailssupporting
confidence: 73%
“…As was generically observed in many IV compounds [6], CeNi 2 Al 3 exhibits large thermopower (~ 40 μV/K) over a wide temperature range [7]. Upon Cu doping at Ni site, it shows simultaneous optimization of thermoelectric parameters [7,8].…”
Section: Introductionmentioning
confidence: 74%
“…Around 2.9 K another peak was observed for x = 0.0 and 0.1, in the present case (inset of figure 2) where as a sharp rise in C p /T is observed around this temperaure and is attributed to the impurity spins [13]. The low-T rise of C p /T for x = 0.3 and 0.4 is considered to be an intrinsic feature of phase pure samples [5,14,16]. Low-T electronic specific heat coefficient γ 0 estimated by extrapolating the data to 0 K gives a value of 141 and 269 mJ mol −1 K −2 for x = 0.3 and 0.4, respectively.…”
Section: Resultsmentioning
confidence: 55%
“…This implies that instead of simple local moment a scenario is evolved wherein local magnetic clusters might have been formed due to disorder induced carriers when Cu is doped. It is to be noted that we have already shown disorder induced effects in TEP in our earlier report [16]. Upon application of magnetic fields, J value decreases and reaches to a value lower than that of free ion moment like 1.5 and 2 at 12 T for x = 0.3 and 0.4, respectively.…”
Section: Resultsmentioning
confidence: 80%
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