Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO

Zhou, Hong; Lou, Xiabing; Kim, Sang Bok; Chabak, Kelson D.; Gordon, Roy G.; Ye, Peide D.

doi:10.1109/led.2017.2731993

Cited by 21 publications

(5 citation statements)

References 16 publications

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“…To solve the difficulties of p-type doping of AlGaN alloys, researchers have developed a variety of methods to restrain the self-compensation process, increasing the solubility of Mg and reduce the AE of Mg in AlGaN 77 , 132 , 133 . These methods include delta ( δ ) doping, modulation doping, SL doping, codoping, polarization-induced doping, and multidimensional doping 79 , 96 , 134 – 138 .…”

Section: Epitaxial Growth and Doping Of Alganmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

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Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

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Section: Epitaxial Growth and Doping Of Alganmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

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“…2(a) shows the I D -V GS characteristics of a GaN MOS-HEMT with 15 nm FE hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2 , HZO) as gate insulator and channel length (L ch ) of 7 μm. The device structure and fabrication process are the same as the planar MOS-HEMT in previous report [17], except for the application of 15 nm HZO as ferroelectric gate insulator. The application of GaN MOS-HEMT structure instead of GaN MOSFET here is due to the difficulty in realizing GaN MOSFET device experimentally.…”

Section: Fe-fet Experiments With Different Channel Semiconductorsmentioning

confidence: 99%

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Lin

Noh

et al. 2020

IEEE J. Electron Devices Soc.

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In this work, channel semiconductor is identified and demonstrated to have significant impact on the memory characteristics of ferroelectric field-effect transistors (Fe-FETs). It is understood that, to achieve high electron density at on-state, it requires high hole density at the off-state to realize the charge balance and strong ferroelectric polarization switching in n-type Fe-FETs. Therefore, Fe-FETs with a wider bandgap semiconductor channel have a much smaller memory window than Fe-FETs with a narrower bandgap semiconductor channel due to the insufficient polarization switching. The simple device physics suggests that narrow bandgap semiconductor channel such as Ge is preferred for Fe-FETs with large memory window.

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“…In addition to the N 2 surface treatment, to reduce the gate leakage current significantly, the metal oxide semiconductor high electron mobility transistor (MOS-HEMT) with an insulating dielectric have also been widely investigated. Numerous gate dielectrics have been experimented, such as SiO 2 [12], AlN [13], Al 2 O 3 [14], MgCaO [15], HfO 2 [16], ZrO 2 [17], TiO 2 [18], etc. The dielectric layer not only can suppress the gate leakage current, but also can be used as a passivation layer to suppress the current collapse phenomenon [19].…”

Section: Introductionmentioning

confidence: 99%

Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering

Yang

Mazumder

et al. 2021

Materials

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In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO2 and comparing it with the commonly used HfO2 gate dielectric with the N2 surface plasma treatment. The inclusion of Al in the HfO2 increased the crystalline temperature (~1000 °C) of hafnium aluminate (HfAlOX) and kept the material in the amorphous stage even at very high annealing temperature (>800 °C), which subsequently improved the device performance. The gate leakage current (IG) was significantly reduced with the increasing post deposition annealing (PDA) temperature from 300 to 600 °C in HfAlOX-based MOS-HEMT, compared to the HfO2-based device. In comparison with HfO2 gate dielectric, the interface state density (Dit) can be reduced significantly using HfAlOX due to the effective passivation of the dangling bond. The greater band offset of the HfAlOX than HfO2 reduces the tunneling current through the gate dielectric at room temperature (RT), which resulted in the lower IG in Γ-gate HfAlOX MOS-HEMT. Moreover, IG was reduced more than one order of magnitude in HfAlOX MOS-HEMT by the N2 surface plasma treatment, due to reduction of N2 vacancies which were created by ICP dry etching. The N2 plasma treated Γ-shaped gate HfAlOX-based MOS-HEMT exhibited a decent performance with IDMAX of 870 mA/mm, GMMAX of 118 mS/mm, threshold voltage (VTH) of −3.55 V, higher ION/IOFF ratio of approximately 1.8 × 109, subthreshold slope (SS) of 90 mV/dec, and a high VBR of 195 V with reduced gate leakage current of 1.3 × 10−10 A/mm.

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Enhancement-Mode AlGaN/GaN Fin-MOSHEMTs on Si Substrate With Atomic Layer Epitaxy MgCaO

Cited by 21 publications

References 16 publications

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering

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