Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

Murugapandiyan, P.; Sri Rama Krishna, Kalva; Revathy, A.; Fletcher, Augustine

doi:10.1007/s11664-024-11005-z

J. Electron. Mater.

2024

DOI: 10.1007/s11664-024-11005-z

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Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

P. Murugapandiyan,

Kalva Sri Rama Krishna,

A. Revathy

et al.

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2024

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Cited by 3 publications

References 46 publications

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Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity

Murugapandiyan,

Revathy,

Ramkumar

et al. 2024

J. Electron. Mater.

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Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity

Murugapandiyan,

Revathy,

Ramkumar

et al. 2024

J. Electron. Mater.

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DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate

Jagadesh,

Karthikeyan,

Somasundaram

2024

Microelectronics Journal

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Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate

Kim,

Park

2024

Materials

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In this study, we aimed to propose an optimal structure for an AlGaN/InGaN/GaN/AlGaN/SiC HEMT by investigating how the breakdown voltage varies with the thickness and composition of the InGaN layer. The breakdown voltage was shown to be highly dependent on the In composition. Specifically, as the In composition increased, the breakdown voltage rapidly increased, but it exhibited saturation when the In composition exceeded 0.06. Therefore, it is desirable to maintain the In composition at or above 0.06. The variation in breakdown voltage due to thickness was relatively small compared to the variation caused by In composition. While the breakdown voltage remained nearly constant with increasing thickness, it began to decrease when the thickness exceeded 10 nm. Hence, the thickness should be kept below 10 nm. Additionally, as the In composition increased, the subthreshold swing (SS) also increased, but the drain current value was shown to increase. On the other hand, it was observed that the SS value in the transfer characteristics and the current–voltage characteristics were almost unaffected by the thickness of the InGaN layer.

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Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics

Cited by 3 publications

References 46 publications

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity

DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate

Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate

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