Enhancement-mode
 n
 -channel GaN MOSFETs fabricated on
 p
 -GaN using HfO
 2
 as gate oxide

Sugiura, S.; Kishimoto, Shigeru; Mizutani, Takashi; Kuroda, Masayuki; Ueda, T.; Tanaka, Tsuyoshi

doi:10.1049/el:20071814

Cited by 18 publications

(9 citation statements)

References 5 publications

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“…Based on this result, we have recently succeeded in fabricating inversion-mode nchannel GaN MOSFETs using a thick HfO 2 as a gate oxide. The maximum transconductance was 45 mS/mm [6]. Even though this value is the highest among the GaN MOSFETs, to our knowledge, it is still smaller than that of the AlGaN/GaN HEMTs.…”

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confidence: 61%

Normally‐off AlGaN/GaN MOSHFETs with HfO₂ gate oxide

Sugiura

Kishimoto

Mizutani

et al. 2008

Phys. Status Solidi (c)

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Normally‐off AlGaN/GaN MOSHFETs with a thick HfO2 as a gate oxide have been fabricated. The HfO2 with a thickness of 100 nm was deposited by pulsed‐laser deposition. The threshold voltage was 3 V and the maximum drain current was 730 mA/mm at a gate voltage of 10 V. The maximum transconductance was 185 mS/mm, which was about 8 times larger than that of the GaN MOSFETs. The field effect mobility was 900–1500 cm2/Vs, which is also higher than that of the GaN MOSFETs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 61%

Normally‐off AlGaN/GaN MOSHFETs with HfO₂ gate oxide

Sugiura

Kishimoto

Mizutani

et al. 2008

Phys. Status Solidi (c)

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“…Many researchers have previously reported on the operation of the GaN MOSFETs [1][2][3][4][5][6][7][8]. We have reported on the 2.2 A operation at 2508C on the GaN MOSFETs [1].…”

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confidence: 83%

Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate

et al. 2009

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A GaN reduced surface field (RESURF) metal oxide semiconductor (MOSFET) on a sapphire substrate is fabricated. The n 2 -type RESURF zone was formed by a Si ion implantation technique. The n þ -and n 2 -type GaN was activated at 12608C for 30 s in ambient Ar. The sheet carrier densities (activation ratio) of n þ -and n 2 -GaN were 3.0 Â 10 15 (100%) and 1.1 Â 10 12 cm 22 (1.8%), respectively. As a result, more than 1500 V and 2 A operation of the GaN RESURF MOSFETs is achieved with a channel length of 4 mm, a channel width of 150 mm, and the RESURF length of 20 mm.Introduction: GaN-based metal oxide semiconductor (MOS) field effect transistors (FETs) (MOSFETs) have the possibility of a normally-off, high breakdown field and a large current operation. Many researchers have previously reported on the operation of the GaN MOSFETs [1-8]. We have reported on the 2.2 A operation at 2508C on the GaN MOSFETs [1]. However, the breakdown voltage was almost 40 V because the gate oxide SiO 2 was broken owing to the concentration of the electric field.A reduced surface field (RESURF) zone, which is inserted between the channel and drain region, is capable of reducing the electric field in a gate oxide. The technique of ion implantation is attractive for forming the RESURF zone, because it can introduce well-defined impurity concentrations in selected regions. So far, the operation of GaN RESURF-MOSFETs were realised with the breakdown voltage of about 1000 V [9, 10]. However, the on-state current was not so high.In this Letter, we report on the GaN-based Si ion-implanted RESURF MOSFETs. As a result, more than 1500 V and the 2 A operation were achieved.

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“…To improve the performance we have fabricated GaN MOSFETs using HfO 2 with a large dielectric constant and achieved a maximum transconductance (g mmax ) of 45 mS/mm and maximum drain current of 400 mA/mm [13]. Even though these values are several times larger than those of conventional GaN MOSFETs with SiO 2 gate oxide, they are still smaller than those of AlGaN/GaN HEMTs.…”

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confidence: 99%