Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS

Electronic band-edge structure, effective masses, and optical absorption of Si1-xGe x using an extended FPLAPW/VCA/LDA+U computational method

“…Si 1−x Ge x is also promising for quantum well devices, infrared detectors, and modulation-doped field-effect transistors [2]. In this work, we present an extended full-potential calculation method for calculating electronic and optical properties of Si 1−x Ge x .…”

Effect of Si cap layer on parasitic channel operation in Si/SiGe metal–oxide–semiconductor structures

“…This results in improved p-channel devices for complementary metal-oxide-semiconductor ͑CMOS͒ device integration for high frequency applications. [1][2][3] Initial thrust in SiGe based CMOS design involved work with direct wet oxide growth on a SiGe layer, which led to Ge segregation at the SiO 2 /SiGe interface. 4 -7 These studies involved thick SiGe and oxide layers; 6,8,9 for sub 0.1 m generation devices with ultrashort channels much smaller dimension are of significance.…”

“…A physical Si layer between the gate oxide and the SiGe channel limits the effect of the hot carriers and surface scattering and reduces the gate leakage current. 1 A negative consequence of the Si cap is that for high bias voltage operation a secondary Si/SiO 2 surface parasitic channel develops in parallel with the SiGe channel. 19,20 The emergence of the parasitic channel has fatal consequences on the effective mobility.…”

Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process

“…Several researchers have worked on developing Si 1Àx -Ge x -channel PMOSFETs [7][8][9][10][11]. However, all of them use undoped or n-type doped channels with p + -polysilicon gates, making them conventional surface channel PMOSFETs.…”